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Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

Published online by Cambridge University Press:  01 February 2011

S. L. Liew ,
C. T. Chua ,
D. H. L Seng  and
D. Z. Chi
S. L. Liew
Affiliation:
sl-liew@imre.a-star.edu.sg, IMRE, OESC, 3 Research Link, Singapore, N/A, Singapore
C. T. Chua
Affiliation:
ct-chua@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
D. H. L Seng
Affiliation:
debbie-seng@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
D. Z. Chi
Affiliation:
dz-chi@imre.a-star.edu.sg, Institue of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore
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Abstract

Schottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates.was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

Keywords

GedopantNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F08-01
Copyright
Copyright © Materials Research Society 2007

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