No CrossRef data available.
Article contents
Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation
Published online by Cambridge University Press: 01 February 2011
Abstract
Schottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2007