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Schottky Barriers on p-GaN

Published online by Cambridge University Press:  21 February 2011

N.I. Kuznetsov ,
E.V. Kalinina ,
V.A. Soloviev  and
V.A. Dmitriev
N.I. Kuznetsov
Affiliation:
A.F. Ioffe InstituteCree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia, EED@cree.spb.su
E.V. Kalinina
Affiliation:
A.F. Ioffe InstituteCree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia, EED@cree.spb.su
V.A. Soloviev
Affiliation:
A.F. Ioffe InstituteCree Research EED, 26 Polytechnicheskaya Str., St. Petersburg, 194021 Russia, EED@cree.spb.su
V.A. Dmitriev
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
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Abstract

Schottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 837
Copyright
Copyright © Materials Research Society 1996

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References

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