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Secondary Electron Emission Studies of Diamond and GaN Materials

Published online by Cambridge University Press:  10 February 2011

J.E. Yater ,
A. Shih  and
D.S. Katzer
J.E. Yater
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
A. Shih
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
D.S. Katzer
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

Secondary electron emission spectroscopy is used to examine the transport and emission of low-energy electrons in several wide bandgap materials. In particular, the secondary emission properties of C(100), C(111), and CVD diamond samples are compared in order to examine the effect of crystallographic orientation on the emission characteristics. Very high yields are obtained from hydrogenated and cesiated negative-electron-affinity surfaces of all three samples, indicating that low-energy electrons are transported and emitted very efficiently in the diamond materials. While the energy distribution of the emitted electrons is found to be sharply peaked at low energy for all three samples, the energy distributions measured from the C(111) surfaces are broader and reveal structure in the energy gap. The different emission processes at the C(100) and C(111) surfaces may account for the energy distributions observed from the polycrystalline CVD diamond. Finally, initial secondary emission measurements are taken from GaN and AlGaN films grown by molecular beam epitaxy. The secondary emission is not as strong as from the diamond samples, and the measurements reveal the impact of interface and surface barriers on the emission process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 551
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Materials Issues in Vacuum Microelectronics, edited by Zhu, W., Pan, L. S. Felter, T.E., and Holland, C. (Mater. Res. Soc. Proc. 509, Pittsburgh, PA, 1998).Google Scholar
2. Cui, J.B., Ristein, J., and Ley, L., Phys. Lett. 81, 429 (1998).Google Scholar
3. Diederich, L., Kuttel, O.M., Aebi, P., Maillard-Schaller, E., Fasel, R., and Schlapback, L., Diamond Relat. Mater. 7, 660 (1998).Google Scholar
4. Jones, F.H., Molloy, A.B., Loh, K.P., Foord, J.S., Jackman, R.B., Diamond Relat. Mater. 7, 651 (1998).Google Scholar
5. Nemanich, R.J., Baumann, P.K., Benjamin, M.C., King, S.W., Weide, J. van der, and Davis, R.F., Diamond Relat. Mater. 5, 790 (1996).Google Scholar
6. Wu, C.I. and Kahn, A., Appl. Phys. Lett. 74, 1433 (1999).Google Scholar
7. Jenkins, R.O. and Trodden, W.G., Electron and Ion Emission (Dover, New York, NY, 1965), p. 54.Google Scholar
8. Pehrsson, P.E., Celii, F.G., and Butler, J.E., Diamond Films and Coating Development, Properties and Applications, edited by Davis, R.F. (Noyes, Park Ridge, NJ, 1993), p. 68.Google Scholar
9. Thomas, B.D., Pehrsson, P.E., and Butler, J.E., J. Appl. Phys. 75, 1804 (1994).Google Scholar
10. Shih, A., Yater, J., Pehrsson, P., Butler, J., Hor, C., and Abrams, R., J. Appl. Phys. 82, 1860 (1997).Google Scholar
11. Oelhafen, P. and Freeouf, J.L., J. Vac. Sci. Technol. A 1, 96 (1983).Google Scholar
12. Yater, J.E., Shih, A., and Abrams, R., Phys. Rev. B 56, R4410 (1997).Google Scholar
13. Pan, L.S., Hsu, W.L., Fox, C.A., Kelly, M.A., Hagstrom, S.B., Vergara, G., Cao, R., and Spicer, W., 1998 Spring MRS Meeting Abstracts, p. 67 (1998).Google Scholar
14. Loh, K.P., Foord, J.S., Egdell, R.G., Jackman, R.B., Diamond Relat. Mater. 6, 874 (1997).Google Scholar
15. Stallcup, R.E. II and Perez, J.M. in Materials Issues in Vacuum Microelectronics, edited by Zhu, W., Pan, L. S. Felter, T.E., and Holland, C. (Mater. Res. Soc. Proc. 509, Pittsburgh, PA, 1998), p. 161.Google Scholar
16. Feldman, C., Phys. Rev. 117, 455 (1960).Google Scholar
17. Martinelli, R.U. and Fisher, D.G., Proc. IEEE 62, 1339 (1974).Google Scholar
18. Wu, C.I., Kahn, A., Taskar, N., Dorman, D., and Gallagher, D., J. Appl. Phys. 83, 4249 (1998).Google Scholar
19. Smith, K.E., Dhesi, S.S., Stagarescu, C.B., Downes, J., Doppalapudi, D., and Moustakas, T.D. in Nitride Semiconductors, edited by Ponce, F.A., DenBaars, S.P., Meyer, B.K., Nakamura, S., and Strite, S. (Mater. Res. Soc. Proc., Pittsburgh, PA, 1998), p. 787.Google Scholar
20. Kampen, T.U., Eyckeler, M., and Monch, W., Appl. Surf. Sci. 123/124, 28 (1998).Google Scholar