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Selective Oxidation of Buried Aigaas for Fabrication of Vertical-Cavity Lasers

Published online by Cambridge University Press:  10 February 2011

Kent D. Choquette ,
K. M. Geib ,
H. C. Chui ,
H. Q. Hou  and
Robert Hull
Kent D. Choquette
Affiliation:
Photonics Research Department Sandia National Laboratories Albuquerque, NM 87185–0603
K. M. Geib
Affiliation:
Photonics Research Department Sandia National Laboratories Albuquerque, NM 87185–0603
H. C. Chui
Affiliation:
Photonics Research Department Sandia National Laboratories Albuquerque, NM 87185–0603
H. Q. Hou
Affiliation:
Photonics Research Department Sandia National Laboratories Albuquerque, NM 87185–0603
Robert Hull
Affiliation:
University of Virginia Department of Materials Science Charlottesville, VI 22903–2442
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Abstract

We discuss the selective conversion of buried layers of AlGaAs to a stable oxide and the implementation of this oxide into high performance vertical-cavity surface emitting lasers (VCSELs). The rate of lateral oxidation is shown to be linear with an Arrhenius temperature dependence. The measured activation energies vary with Al composition, providing a high degree of oxidation selectivity between AIGaAs alloys. Thus buried oxide layers can be selectively fabricated within the VCSEL through small compositional variations in the AlGaAs layers. The oxidation of AlGaAs alloys, as opposed to AlAs, is found to provide robust processing of reliable lasers. The insulating and low refractive index oxide provides enhanced electrical and optical confinement for ultralow threshold currents in oxide-apertured VCSELs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 53
Copyright
Copyright © Materials Research Society 1996

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