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Semiconductive Behavior of Sb Doped SnO2 Thin Films

Published online by Cambridge University Press:  15 February 2011

K.-O. Grosse-Holz ,
J. F. M. Cillessen ,
M. W. J. Prins ,
P. W. M. Blom ,
R. M. Wolf ,
L. F. Feiner  and
R. Waser
K.-O. Grosse-Holz
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Institute for electrical engineering materials, RWTH Aachen, 52056 Aachen, Germany, grosse @ natlab.research.philips.com
J. F. M. Cillessen
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
M. W. J. Prins
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. W. M. Blom
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
R. M. Wolf
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
L. F. Feiner
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
R. Waser
Affiliation:
Institute for electrical engineering materials, RWTH Aachen, 52056 Aachen, Germany, grosse @ natlab.research.philips.com
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Abstract

Sb doped SnO2 has been deposited on polished ceramic Al2O3 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been measured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped SnO2 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.

Keywords

SnO2mobilityconductivityoxidic field-effect transistorgrain boundary
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 67
Copyright
Copyright © Materials Research Society 1996

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