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Sensing Mechanism of NO in Nanocrystalline Ru, Pt, Pd-Doped SnO2: Electron Paramagnetic Resonance, Mössbauer and Electrical Study

Published online by Cambridge University Press:  01 February 2011

Carmen Canevali ,
Claudio Maria Mari ,
Mariachiara Mattoni ,
Franca Morazzoni ,
Riccardo Ruffo ,
Roberto Scotti ,
Umberto Russo  and
Luca Nodari
Carmen Canevali
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Claudio Maria Mari
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Mariachiara Mattoni
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Franca Morazzoni
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Riccardo Ruffo
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Roberto Scotti
Affiliation:
Dipartimento di Scienza dei Materiali, INSTM-UdR Milano-Bicocca, Università degli Studi di Milano-Bicocca, Via R.Cozzi 53, 20125 Milano, ITALY.
Umberto Russo
Affiliation:
Dipartimento di Scienze Chimiche, Università degli Studi di Padova, Via Marzolo 1, 35131 Padova, Italy
Luca Nodari
Affiliation:
Dipartimento di Scienze Chimiche, Università degli Studi di Padova, Via Marzolo 1, 35131 Padova, Italy
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Abstract

The reactivity of nanosized Ru(Pd,Pt)-doped SnO2, obtained by sol-gel synthesis, towards NO/Ar was investigated by Electron Paramagnetic Resonance (EPR), Mössbauer and Electrical Resistance measurements. A sensing mechanism was proposed that involves (i) the formation of bielectronic oxygen vacancies VO, (ii) their single-ionisation to VO•, which injects electrons to SnO2 conduction band, (iii) the transfer of VO• electrons to the transition metal centers reducing them to lower oxidation states. It was suggested that the electronic exchange between oxide and transition metal is responsible for the enhancement of the reactivity in doped SnO2 with respect to the undoped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A4.7
Copyright
Copyright © Materials Research Society 2005

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References

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