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Shape Transition of InAs Islands on InP (111)A

Published online by Cambridge University Press:  10 February 2011

Hanxuan Li ,
Theda Daniels-Race  and
Mohamed-Ali Hasan
Hanxuan Li
Affiliation:
Department of Electrical & Computer Engineering, Duke University, Durham, NC27708-0291
Theda Daniels-Race
Affiliation:
Department of Electrical & Computer Engineering, Duke University, Durham, NC27708-0291
Mohamed-Ali Hasan
Affiliation:
Department of Electrical & Computer Engineering, The University of North Carolina, Charlotte, NC 28223
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Abstract

Atomic force microscopy (AFM) reveals that InAs islands grown on InP (111)A, as they grow in size, undergo a shape transition. Below a critical size of around 30 nm, round-shaped quantum dots form, while above this size they grow in the shape of triangles, reflecting the symmetry of the (111) substrates. The edges of triangular islands are aligned along the three equivalent {110} directions of the InP (111) surface. The triangular islands grow laterally much faster than vertically, indicating the aspect ratio decrease of the islands with increasing InAs coverage. Our results provide a better understanding of the self-organization behaviors of InAs on InP (111)A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 109
Copyright
Copyright © Materials Research Society 2000

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References

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