Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-10-31T20:40:44.386Z Has data issue: false hasContentIssue false
  • English
  • Français

Si Wire Light Emission Changes During Si/SiOx Interface Formation

Published online by Cambridge University Press:  21 March 2011

F.G. Becerril-Espinoza ,
T. V. Torchynska ,
M. Morales Rodríguez ,
L. Khomenkova  and
L.V. Scherbina
F.G. Becerril-Espinoza
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
T. V. Torchynska
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
M. Morales Rodríguez
Affiliation:
ESFM - National Polytechnic Institute, Mexico D.F., 07738, Mexico.
L. Khomenkova
Affiliation:
Inst. Semiconductor Physics at National Academy of Sciences, Kiev, 03028, Ukraine.
L.V. Scherbina
Affiliation:
Inst. Semiconductor Physics at National Academy of Sciences, Kiev, 03028, Ukraine.
Get access

Abstract

Photoluminescence (PL), PL excitation, Raman scattering, IR absorption spectra as well as PSi surface morphology, have been studied as a function of Si/SiOx interface formation during PSi ageing in ambient air with the aim to reveal a PL mechanism. It is shown that fresh- prepared PSi layers created at low values of the anodization current Ia is characterized by “red” emission band centered at 1.72 eV, while the samples prepared at higher values of Ia have “orange” PL band centered at 2.00 eV. During oxidation in ambient air two processes take place at the PSi ageing: the oxidation of small size Si nano-crystallites up to their disappearing and the change of silicon oxide composition at the Si/SiOx crystallite surface. These processes initiate changes in PL and PL excitation spectra. The peak position of “red” PL band shifts to the high-energy up to 1.80-1.85 eV while the “orange” band does not change essentially.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.35
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L.T.. Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Dittrich, Th., Flietner, H., Timoshenko, V. and Kashkarov, P.K., Thin Solid Films 255, 149 (1995)Google Scholar
3. Kanemitsu, Y., Matsumoto, T. and Futagi, T., Jap. J. Appl. Phys. 32, 411 (1993).Google Scholar
4. Lavine, J.M., Sawan, S.P., Shieh, Y.T. and Bellezza, A.J., Appl. Phys. Lett, 62, 1099 (1993).Google Scholar
5. Fuchs, H.D.et al., Phys. Rev. B, 48, 8172 (1993).Google Scholar
6. Qin, G.G. and Jia, Y.Q., Solid State Commun., 86, 559 (1993).Google Scholar
7. Prokes, S.M., Appl. Phys. Lett. 62, 3244 (1993);Google Scholar
8. Torchinskaya, T.V., Korsunskaya, N.E., Dzumaev, B. and Sheinkman, M.K., Proc, H.J.. 1995 MRS Fall Meeting, Boston, USA, (1995).Google Scholar
9. Torchynska, T.V.et al. J. of Electronic Spectroscopy and Related Phenomena, 114–116, 235 (2001).Google Scholar
10. Tamura, H., Ruckschloss, M., Wirschem, T. and Veprek, S., Appl. Phys. Lett. 65, 1537 (1994).Google Scholar
11. Prokes, S.M., Carlos, W.E. and Glembocki, O.J., Phys. Rev. B 50, 17093 (1994);Google Scholar
12. Prokes, S.M. and Carlos, W.E., J. Appl. Phys. 78, 2671 (1995).Google Scholar
13. Torchynska, T.V., Korsunskaya, N.E., Khomenkova, L. Yu. and Prokes, S.M., Microelectronics & Engineering, 51–52, 485 (2000).Google Scholar
14. Torchynska, T.V., Korsunskaya, N.E., Dzhumaev, B.R. and Prokes, S.M., Thin Solid Films, 381/1, 88 (2001).Google Scholar
15. Kanemitsu, Y., Ogawa, T., Shiraishi, K. and Takeda, K., Phys. Rev. B 48, 4883 (1993).Google Scholar
16. Torchynska, T.V., Khomenkova, L.I., Korsunska, N.E. and Dzumaev, B.R., J. Phys. Chem. Solids, 61, 937 (2000).Google Scholar
17. Gole, J.L. and Prokes, S.M., Phys.Rev.B, 58, 4761 (1998).Google Scholar
18. Moyer, P.J., Cloninger, T.L., Gole, J.L. and Bottomley, L.A., Phys.Rev.B, 60, 4889 (1999).Google Scholar
19. Torchynska, T.V., Khomenkova, L.I., Korsunska, N.E. and Sheinkman, M.K., Physica B, 273–274, 955 (1999).Google Scholar
20. Brandt, M. S.et al. Solid State Commun. 81, 307 (1992).Google Scholar
21. Murayama, K., Miyazaki, S. and Hirose, M., Sol.State Communication, 93, 841 (1995)Google Scholar
22. Prokes, S.M., Carlos, W.E., Veprek, S., Ossanik, Ch., Phys. Rev. B 58, 15632 (1998).Google Scholar