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Silicided P-N Junction Diodes Fabricated by Silicidation through Silicon Buffer Layer and Dopant Drive-Out Process

Published online by Cambridge University Press:  03 September 2012

W. M. Chen ,
J. C. Lee  and
M.R. Frost
W. M. Chen
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin TX 78712
J. C. Lee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin TX 78712
M.R. Frost
Affiliation:
Evans East, Inc., 666 Plainsboro #1236, Plainsboro NJ 08536
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Abstract

This study investigates characteristics of p-n junction diodes fabricated by silicidation through a silicon buffer layer and dopant drive-out process. The purpose of using the buffer silicon layer is to reduce silicon consumption from the Si substrate during silicidation, and thus reduce the effective junction depth. The resulting structure is suitable for elevated CoSi2 source/drain contact in a metal-oxide-semiconductor field effect transistor or a silicided polysilicon emitter in a bipolar junction transistor. It was found that boron diffusion is enhanced by these buffer layers comparing to silicided diodes without silicon buffer layers. The sheet resistance of the CoSi2/polysilicon/Si structure does not degrade as seriously as CoSi2/polysilicon/oxide structure. The diode leakage current density is higher compared to diodes without buffer layers, especially when thinner buffer layers and high temperature 1000°C anneal are used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 47
Copyright
Copyright © Materials Research Society 1994

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References

1. Wang, Q., Osburn, C. M., and Canovai, C., IEEE Trans. Ele. Dev. 11, 2486 (1992).Google Scholar
2. Probst, V., Schaber, H., Mitwalsky, A., Kabza, H., Hoffmann, B., hove, L. Van den, and Maex, K., J. Appl. Phys., 70, 708 (1991).CrossRefGoogle Scholar
3. Liu, R., Williams, D. S., and lynch, W.T., J. Appl. Phys., 63, 1990 (1991).CrossRefGoogle Scholar
4. Chen, W., Lin, J., Banerjee, S., and Lee, J. in Advanced Metallization and Processing for Semiconductor Devices and Circuits-II, edited by Katz, A., Nissim, Y. I., Murarka, S. P., and Harper, J. M. E. ( Mater. Res. Soc. Proc. 260, Pittsburgh, PA, 1992) pp. 163–167.Google Scholar
5. Chen, W. M., Lin, J., Banerjee, S. K., and Lee, J. C., J. Appl. Phys., 73, 4712 (1993).CrossRefGoogle Scholar
6.Lin, J., Banerjee, S. K., and Lee, J. C., J. Appl. Phys.,68, 1062 (1990).Google Scholar