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The Simulation of Copper Drift in SiO2 during Bias Temperature Stress (BTS) Test

Published online by Cambridge University Press:  01 February 2011

Jang-Yeon Kwon ,
Ki-Su Kim ,
Young-Chang Joo  and
Ki-Bum Kim
Jang-Yeon Kwon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Ki-Su Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Young-Chang Joo
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

In order to develop a reliable interconnect integration scheme by using Cu in ultra large scale integrated devices (ULSI), the evolutions of the concentration profile of copper ions in SiO2 was simulated under bias temperature stress (BTS) test. Diffusion equation was solved numerically in two electric field modes. One is constant electric field mode where copper drift was simulated with the assumption that electric field is constant within SiO2 film. In variable electric field mode, simulation was carried out considering the variation of electric field in SiO2 due to copper ions. The diffusion of copper ions in variable electric field mode is slower than that in constant electric field mode, because copper ions in SiO2 reduce electric field near the interface between Cu and SiO2. Flatband voltage shift ) (ΔVFB increases parabolically as BTS time increases in constant electric field mode. However, it has linear relation with BTS time in variable electric field mode, which is typically observed in experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 731: Symposium W – Modeling and Numerical Simulation of Materials Behavior and Evolution , 2002 , W8.17
Copyright
Copyright © Materials Research Society 2002

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References

1. McBrayer, J. D., PH.D. dissertation, Stanford University (1983)Google Scholar
2. Shacham-Diamand, Y., Dedhia, A., Hoffstetter, D., and Oldham, W. G., J. Electrochem. Soc., 140(8), 2427 (1993)Google Scholar
3. Raghavan, G., Chiang, C., Anders, P. B., Tzeng, S. M., Villasol, R., Bai, G., Bohr, M., and Fraser, D. B., Thin Solid Films, 262, 168 (1995)Google Scholar
4. Vogt, M., Kachel, M., Plotner, M., and Drescher, K., Microelectronic engineering, 37/38, 181 (1997)Google Scholar
5. Miyazaki, H., Hinode, K., Homma, Y., and Kobayashi, N., Jpn. J. Appl. Phys., 35(3), 1685 (1996)Google Scholar
6. Lanckmans, F., Greenen, L., and Maex, K., proceedings of Advanced Metallization Conference (1999)Google Scholar
7. Loke, A. L. S., Wetzel, J. T., Townsend, P. H., Tanabe, T., Vrtis, R. N., Zussman, M. P., Kumar, D., Ryu, C., and Wong, S. S., IEEE Trans. Electron Dev., 46(11), 2178 (1999)Google Scholar
8. Park, Y. C., Jackson, W. B., and Johnson, N. M., J. Appl. Phys., 68(10), 5212 (1990)Google Scholar
9. Hornbeck, R. W., Numerical methods, Prentice-Hall Inc. (1975)Google Scholar