Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T18:01:49.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Simultaneous Improvement of Ductility and Strength by Minute Doping in Ultrafine Grained Au Wires-Experiment and First Principle Study

Published online by Cambridge University Press:  01 February 2011

Yeong Huey Effie Chew ,
Chee Cheong Wong ,
Cristiano Ferraris  and
Hui Hui Kim
Yeong Huey Effie Chew
Affiliation:
echew@kns.com, Kulicke & Soffa, Research & development, Kulicke & Soffa (S. E. A.) Pte Ltd, Block 5002, Ang Mo Kio, Avenue 5, #04-05 TECHplace II, Singapore, AL, 569871, Singapore
Chee Cheong Wong
Affiliation:
eproceedings@mrs.org, Nanyang Technological University, Singapore, 569871, Singapore
Cristiano Ferraris
Affiliation:
cferraris@ntu.edu.sg, Nanyang Technological University, Singapore, 569871, Singapore
Hui Hui Kim
Affiliation:
hk-hui@imre.a-star.edu.sg, Insitute of Materials Research, Singapore, 569871, Singapore
Get access

Abstract

Achieving both high strength and ductility is a common goal in the design of fine-grained materials. Here we report that with only ppm level of calcium doping, ductility and strength in ultrafine-grained gold wires can be concurrently improved by 108% and 65% respectively. Preferential segregation of calcium to stacking faults and grain boundaries in gold has reduced stacking fault energy of the system effectively, as shown by TEM and first principle simulation study. Through the modification of stacking fault energy, one can simultaneously increases the strength and ductility of a system.

Keywords

dopantductilitystrength
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1086: Symposium U – Mechanics of Nanoscale Materials , 2008 , 1086-U09-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Masamura, R.A., Hazzledine, P.M., Pande, C.S., Acta Mater. 13, 4527 (1998).Google Scholar
2 Koch, C.C., Morris, D.G., Lu, K., Inoue, A., MRS Bull. 24, 54 (1999).Google Scholar
3 He, G., Eckert, J., Loser, W. and Schultz, L., Nature Mater. 33, 2(2003).Google Scholar
4 Valiev, R. Z. and Alexandrov, I. V., J. Mater. Res. 17, 5 (2002).Google Scholar
5 Chew, Y. H., Wong, C. C., Breach, C. D., Wulff, F. and Mhaisalkar, S., J. Alloys Cpds. 193, 415 (2006).Google Scholar
6ASTM, “Standard Methods of Testing Fine Round and Flat Wire for Electron Devices and Lamps”, F 219, 10 December 1996.Google Scholar
7 Murr, L.E., Interfacial Phenomena, Addison-Wesley Publishing Company, Massachusetts, 1975, p. 196.Google Scholar
8 Cho, J.H., Cho, J.S., Moon, J.T., Lee, J., Cho, Y.H., Kim, Y.W., Rollett, A.D., Oh, K.H., Metall. Mater. Trans. A 34, 1113 (2003).Google Scholar
9 Furukawa, M., Horita, Z., Nemoto, M., Valiev, R. Z., Langdon, T. G.. Philos. Mag. A 78, 203 (1997).Google Scholar
10 Wang, Y. M., Chen, M. W., Zhou, F. H., Ma, E., Nature 419, 912 (2002).Google Scholar
11 Hirsch, P., Howie, A., Nicholson, R. B., Pashley, D. W. and Whelan, M. J., Electron microscopy of thin crystals, Krieger, Robert, New York, 1977, pp. 428.Google Scholar
12 Liao, X. Z., Zhao, Y. H., Srinivasan, S. G., and Zhu, Y. T., Valiev, R. Z. and Gunderov, D. V., Appl. Phys. Lett. 84, 592 (2004).Google Scholar
13 Gorelik, S. S., Recrystallization in metals and alloys, MIR Publisher, Moscow, 1981, pp. 50, 58.Google Scholar
14 Mohamed, F. A., Acta Mater. 51, 4107 (2003).Google Scholar
15 Hirth, J. P., Lothe, J., Theory of dislocations, Wiley, New York, 1982, pp. 517.Google Scholar
16 Yin, W.M., Whang, S.H., Mirshams, R.A., Acta Mater. 53, 383 (2005).Google Scholar