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A Single Source Approach To Deposition Of Nickel and Palladium Sulfide Thin Films By LP-MOCVD

Published online by Cambridge University Press:  11 February 2011

J. Waters ,
P. O'Brien  and
J.H. Park
J. Waters
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
P. O'Brien
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
J.H. Park
Affiliation:
The Manchester Material Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK E-mail: paul.obrien@man.ac.uk and jin-ho.park@man.ac.uk
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Abstract

Compounds of the type M(S2CNRR’)2, M = Ni(II), Pd(II), RR' = Et2, MeEt and MenBu, have been synthesized and used as single-source precursors for the fabrication of NiS and PdS thin films via low-pressure (LP) metal-organic chemical vapour deposition (MOCVD). The phase of nickel sulfide films deposited on glass substrates was found to be NiS1.03 or a mixture of NiS1.03 and NiS, whilst palladium sulfide films were only tetragonal PdS. The films have been characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM), transition electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.16
Copyright
Copyright © Materials Research Society 2003

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References

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