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Single-Wafer RTCVD of Polysilicon: a Complementary Step in Front-End Integrated Processing

Published online by Cambridge University Press:  28 February 2011

Ahbmad Kermani
Ahbmad Kermani*
Affiliation:
RAPRO Technology, Inc.
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Abstract

Polycrystalline silicon is used in the fabrication of integrated circuits in various applications. These include a MOS gate material, bipolar emitter and base contacts, trench refill, complementary material for elevated source / drain structures, solid diffusion source for formation of shallow junctions and the active material in thin film transistors. The deposition of polysilicon as the MOS gate electrode or the bipolar emitter contact follows the most critical processing steps in fabrication of these devices. Maximum reproducibility and highest device performance are achieved when the interfaces between the polysilicon and the underneath substrate are well controlled. This level of control can be obtained by combining the compatible processing steps under a controlled environment. Single-wafer RTCVD of polysilicon was introduced to complement the emerging front-end integrated processing technology for MOS, bipolar and BICMOS devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 253
Copyright
Copyright © Materials Research Society 1991

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References

1. Kermani, Ahmad et al. , Rapid Isothermal Processing, edited by Singh, Rajendra (SPIE Microelectronics Integrated Processing Conference. Proc. 118, Santa Clara, CA 1989) pp. 15–26.Google Scholar
2. Kamins, Theodore I., Polycrystalline Silicon for Integrated Circuit Applications, 1st ed. (Kluwer Academic Publishers, Boston, 1988), pp. 155 to 157.CrossRefGoogle Scholar
3. Kamins, Theodore I., IEEE Electron Device Letters, EDL–10, pp. 401–403 (1989).CrossRefGoogle Scholar
4. Kermani, Ahmad, Johnsgard, K. E., Suthar, S., Kim, K. B. and Lam, C., Proc. of the Material Research Society Meeting, April 1990, San Francisco, CA, pp. 21–27 (1990).Google Scholar
5. Pan, P. and Kermani, A. in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J., Green, M. and Siedel, T. (Mate. Res. Soc. Proc. 146, Pittsburg, PA 1989) pp. 51–53.Google Scholar
6. Offenburg, M., Liehr, M., Rubloff, G. W. and Holloway, K., Appl. Phys. Lett., 57 (12), pp. 1254–1255 (1990).CrossRefGoogle Scholar
7. Patton, G. L., Bravman, J. C. and Plummer, J. D., IEEE Trans. Electron Devices ED–33, p. 1754 (1986).CrossRefGoogle Scholar
8. Crabbe', E., Hoyt, J. L., Moslehi, M. M., Pease, R. F., and Gibbons, J. F., International Symposium on VLSI Technology, Systems and Applications, Proc. of Tech Papers 7-6, pp. 255–259 (1987).Google Scholar
9. Sakai, A., Tatsumi, T. and Niino, T., Semiconductor Silicon 1990, Proceedings of the sixth International Symposium on Silicon Material Science and Technology, pp. 251–260 (1990).Google Scholar
10. Ronsheim, Paul A., Cunnigham, Brian and Dupuis, Mark D., J. Appl. Phys., 69 (1), pp. 495–497 (1990).CrossRefGoogle Scholar
11. Tejwani, Manu J., Paul A, Ronsheim and Kulkarni, Subodh K., The 178th Electrochemical Society Meeting, News Briefs, Seattle, WA (1990).Google Scholar
12. Kermani, Ahmad and Wong, F., Solid State Technology, pp. 41–43, July 1990.Google Scholar