Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T18:16:39.337Z Has data issue: false hasContentIssue false
  • English
  • Français

SiO2/Si Interfaces Studied by Stm and Hrtem

Published online by Cambridge University Press:  21 February 2011

Masaaki Niwa ,
Minoru Onoda ,
Hiroshi Iwasaki  and
Robert Sinclair
Masaaki Niwa
Affiliation:
Matsushita Electric Industrial Co.,Ltd., Semiconductor Research Center
Minoru Onoda
Affiliation:
Matsushita Technoresearch, Inc., Materials Characterization Division 3-15 Yagumno-nakamachi Moriguchi, Osaka 570 Japan
Hiroshi Iwasaki
Affiliation:
Matsushita Electric Industrial Co.,Ltd., Semiconductor Research Center
Robert Sinclair
Affiliation:
Stanford University, Dept. of Materials Science and Engineering Stanford, CA 94305 USA
Get access

Abstract

The morphology of SiO2/Si interfaces in a semiconductor LOCOS active area grown by several oxidation conditions has been studied, to compare the roughness of the interfaces observed by STM and HRTEM in particular. Samples consisted of typical MOS structures with a polysilicon gate/SiO2/Si(100). Hydrogen terminated Si surfaces were prepared by means of HF dipping for STM observations. The interface roughness of a “dry” oxide observed by HRTEM was slightly larger than that of a “wet” oxide. Good agreement could be found between STM and HRTEM for the wet oxide interfaces. As for the dry oxide interface, it was more difficult to obtain a reproducible STM image than for the wet oxide interface, but the reverse was true for HRTEM. During the HRTEM, high energy electrons damage the sample and reduce the oxide thickness, especially in the wet oxide samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 141
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Goodnick, S. M., Ferry, D. K., Wilmsen, C. W., Liliental, Z., Fathy, D. and Krivaneck, O. L.,Phys.Rev.B 32,12,8171(1985)Google Scholar
[2] Hahn, P.O. and Henzler, M.,J.Vac.Sci.and Technol. A2,574(1984)Google Scholar
[3] Hecht, M. H., Bell, L. D., Grunthaner, F.J. and Kaiser, W.J., in “SiO2 and Its Interfaces”, edited by Pantelides, S.T. and Lucovsky, G. (Mater.Res.Soc.Proc.105,Boston, MA 1987) pp.307 Google Scholar
[4] Takahagi, T., Nagai, I., Ishitani, A. and Kuroda, H.,J.Appl.Phys. 64,3516(1988)Google Scholar
[5] Carim, A. H., Dovek, M. M., Quate, C. F., Sinclair, R. and Vorst, C.,Science 237,630(1987)Google Scholar
[6] Kern, W. and Puotinen, D. A.,RCA Rev. 31,187(1970)Google Scholar
[7] Niwa, M. and Iwasaki, H.,Jpn.J.Appl.Phys. 28,12,2320(1989)10.1143/JJAP.28.L2320Google Scholar
[8] Niwa, M., Iwasaki, H. and Hasegawa, S.,J.Vac.Sci.and Technol. A8,1,266(1990)Google Scholar
[9] Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T. and Bright, T. B., Phys.Rev.Lett. 57,249(1986)Google Scholar
[10] Oppolzer, H.,Inst.Phys.Conf.Ser. 93, 2,73 EUREM ‘88,(1988)Google Scholar
[11] Sinclair, R., Kim, K. B., Shippou, O. and Iwasaki, H., J.Electrochem.Soc. 136,2, 511(1989)Google Scholar