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Slurries for Copper Damascene Patterning: Similarities and Differences

Published online by Cambridge University Press:  01 February 2011

A. Jindal ,
G. Rajagopalan ,
M. Gupta ,
J.-Q. Lu ,
K. Rose  and
R.J. Gutmann
A. Jindal
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
G. Rajagopalan
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
M. Gupta
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
J.-Q. Lu
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
K. Rose
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
R.J. Gutmann
Affiliation:
Focus Center-New York, Rensselaer: Interconnections for Gigascale IntegrationRensselaer Polytechnic Institute, Troy, New York-12180
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Abstract

Two first-step copper damascene slurries and one commercial second-step slurry are characterized in terms of their intrinsic properties and CMP performance. A prototype first-step slurry with high static etch rate (∼150 nm/min) yielded higher dishing in the copper lines (∼200 nm in 100 μm lines) compared to a commercial first-step slurry with negligible static etch rate. In both the cases, dishing in copper lines is observed to be a strong function of line width and radial position on the wafer. High static etch rate of the prototype slurry is believed to be responsible for the high dishing. Non-selective second-step polishing removes the liner layer while maintaining planarity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.8
Copyright
Copyright © Materials Research Society 2003

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