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Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

Published online by Cambridge University Press:  17 March 2011

D.L. Williamson ,
D.W.M. Marr ,
B.P. Nelson ,
E. Iwaniczko ,
J. Yang ,
B. Yan  and
S. Guha
D.L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401, U.S.A
D.W.M. Marr
Affiliation:
Department of Chemical Engineering and Petroleum Refining, Colorado School of Mines, Golden, CO 80401, U.S.A
B.P. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, U.S.A
J. Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
B. Yan
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084, U.S.A
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Abstract

The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapor deposition (PECVD) and hot-wire chemical-vapor deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A16.2
Copyright
Copyright © Materials Research Society 1999

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References

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