Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Chang, P.-H.
Slawinski, C.
Mao, B.-Y.
and
Lam, H. W.
1987.
Microstructural characterization of nitrogen-implanted silicon-on-insulator.
Journal of Applied Physics,
Vol. 61,
Issue. 1,
p.
166.
Namavar, F.
Cortesi, E.
and
Sioshansi, P.
1988.
Low-Defect, High-Quality Simox Produced By Multiple Oxygen Implantation with Substoichiometric Total Dose.
MRS Proceedings,
Vol. 128,
Issue. ,
Namavar, F.
Buchanan, B.
Cortesi, E.
and
Sioshansi, P.
1989.
Back Channel Degradation and Device Material Improvement by Ge Implantation.
MRS Proceedings,
Vol. 147,
Issue. ,
Namavar, F.
Cortesi, E.
Perry, D.L.
Johnson, E.A.
Kalkhoran, N.M.
Manke, J.M.
Karam, N.H.
Pinizzotto, R.F.
and
Yang, H.
1990.
Confinement of Threading Dislocations in Simox with a GeSi Strained Layer.
MRS Proceedings,
Vol. 198,
Issue. ,
Puga, M M S
Hummel, R E
and
Burk, D E
1992.
Redistributed of Fe, Cr and Mo in buried oxide silicon-on-insulator structures during high-temperature furnace annealing.
Semiconductor Science and Technology,
Vol. 7,
Issue. 8,
p.
1058.