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Solid Phase Epitaxy of GexSi1-x Alloys on [100] Si

Published online by Cambridge University Press:  28 February 2011

Q. Z. Hong ,
P. Revesz ,
A. J. Yu ,
J. W. Mayer ,
J. M. Poate ,
J. C. Bean  and
D. J. Eaglesham
Q. Z. Hong
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
P. Revesz
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
A. J. Yu
Affiliation:
Present Address: IBM, Burlington, VT
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
J. C. Bean
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
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Abstract

Solid phase epitaxy was studied in the GexSi1-x/[100] Si system in the composition range of 4% to 10% Ge. For strained samples regrowth rates decreased with increasing Ge concentrations, with an activation energy of 2.8 and 3.0 eV for the Ge4Si96 and Ge8Si92 alloys respectively. In contrast, the rates of the strain-relaxed samples increased compared with that of pure Si. The minimum yield of fully regrown samples with Ge concentrations lower than 8% recovered to that of the as-deposited samples. However, the minimum yield of a 3500 Å-thick Ge10Si90 alloy increased to 12 % after recrystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 347
Copyright
Copyright © Materials Research Society 1990

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References

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