Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-18T10:26:37.746Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid-Phase Epitaxial Regrowth of Ion-Implanted Silicon on Sapphire Using Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

A M Hodge ,
A G Cullis  and
N G Chew
A M Hodge
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
A G Cullis
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
N G Chew
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
Get access

Abstract

Solid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 393
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lau, S.S., Matteson, S., Mayer, J.W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T., Appl. Phys. Lett., 34, 76 (1976)Google Scholar
2. Golecki, I. and Nicolet, M-A., Solid State Electr., 23, 803 (1980)Google Scholar
3. Golecki, I., Kinoshita, G. and Paine, B.M., Nucl. Instr. and Methods, 182/183. 675 (1981)Google Scholar
4. Reedy, R.E. and Sigmon, T.W., J. Cryst. Gr., 58, 53 (1982)Google Scholar
5. Reedy, R.E., Sigmon, T.W. and Crystel, L.A., Appl. Phys. Lett., 42, 707 (1983)Google Scholar
6. Golecki, I., Maddox, R.L. and Stika, K.M., J. Electr. Mat., 13, 373 (1984)Google Scholar
7. Yoshi, T., Taguchi, S., Inoue, T. and Tango, H., Jap. J. Appl. Phys., 21, Suppl. 21-1, 175 (1982)Google Scholar
8. Duffy, M.T., Corboy, J.F., Cullen, G.W., Smith, R.T., Soltis, R.A., Harbeke, G., Sandercock, J.R. and Blumenfield, M., J. Cryst. Growth, 58, 10 (1982)Google Scholar
9. Smith, R.T. and Weitzel, C.E., J. Cryst. Growth, 58, 61 (1982)Google Scholar