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Soluble Conducting Polythiophenes for Charge Dissipation in Electron Beam Lithography

Published online by Cambridge University Press:  16 February 2011

Wu-Song Huang
Wu-Song Huang*
Affiliation:
IBM Microelectronics Division, Hopewell Junction, New York 12533
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Abstract

In electron beam lithography, charging on photoresist usually causes image distortion and placement error. To dissipate the charge, a conductive polymeric layer can be introduced either over or under the photoresist coating. In this paper, we will discuss the approach of using toluene and xylene soluble polyalkylthiophcne in combination with photoacid generator as a discharge underlayer or interlayer beneath photoresist to dissipate the accumulated charge during li-bcam exposure. We will also discuss the use of water soluble acid or ammonium salt form of poly 3- (cthanesulfonate) thiophene as discharge. toplayer. During the resist image developing process, the toplayer will be removed by aqueous base. Therefore, it is advantageous to use discharge toplayer due to its simplicity. In this study, the salt and acid form of poly 3- (ethanesulfonate) thiophene was synthesized through chemical polymerization of the corresponding methanesulfonate ester. It exhibits the same properties as that of electrochemically synthesized polymer reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 328: Symposium Q – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials , 1993 , 245
Copyright
Copyright © Materials Research Society 1994

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