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Some Observations on the Electrical Characterization of the Heteroepitaxially Grown Cubic SiC

Published online by Cambridge University Press:  26 February 2011

B. Molnar  and
G. Kelner
B. Molnar
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
G. Kelner
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

This paper re-examines the electrical characterization of thin layers of cubic SiC, grown on (100) Si substrates. The resistivity and Hall coefficient for undoped SiC layers were measured between 10 K and 500 K. Electron spin resonance (ESR) and secondary ion mass spectrometry (SIMS) were used to identify and determine the nitrogen concentrations, which were higher than 1017/cm3. In all the samples examined the Hall measurements indicated impurity band conduction. Therefore, the temperature dependence of the resistivity has been used to derive an activation energy el. The value of el found to be in the range of 0.032–0.025 eV. The observed decrease in activation energy has been correlated with an increase in nitrogen concentration. The presence of substantial nitrogen leads to impurity band conduction and it is the most likely reason for the conflicting values reported for the dominant donor ionization energy by Hall and PL measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 481
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Nishino, S., Powell, J.A. and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).Google Scholar
[2] Kaplan, R., Wagner, R.J., Kim, H.J., and Davis, R.F., Solid State Communications 55, 67 (1985).Google Scholar
[3] Liaw, P., and Davis, R.F., J. Electrochem. Soc. 132, 642 (1985).Google Scholar
[4] Segall, B., Alterovitz, S.A., Haughland, E.J., and Matus, L.G., Appl. Phys. Lett. 49, 548 (1986).Google Scholar
[5] Suzuki, A., Uemoto, A., Shigeta, M., Furakawa, K., and Nakajima, S., Appl. Phys. Lett. 49, 450 (1986).Google Scholar
[6] Yamanaka, M., Daimon, H., Sakuma, E., Misawa, S., and Yoshida, S., J. Appl. Phys. 61, 599 (1987).Google Scholar
[7] Dean, P. J., Choyke, W.J., and Patrick, L., J. Lumin. 15, 299 (1970).Google Scholar
[8] Busch, G., and Labhart, H., Helv. Phys. Acta, 19, 463 (1946).Google Scholar
[9] Lomakina, G. A., Soy. Phys. -Solid State, 7, 475 (1965).Google Scholar
[10] von Munch, W., in Landolt-Bornstein Numerical data and functional relationships in science and technology. New series, Vol.17 A, edited by Madelung, O., Publ., Springer-Verlag, Berlin, Germany (1982).Google Scholar
[11] Fritzsche, H.. Phys. Rev. 99, 406 (1955).Google Scholar
[12] Molnar, B., Hues, S.M., Kelner, G., Nordquist, P.E.R., Jr., and Siebenmann, P.G., Electrochem. Soc. Meeting, Honolulu, Hawaii, Abstr. 700 (1987).Google Scholar
[13] Molnar, B. and Shirey, L.M. on this conference.Google Scholar
[14] Palmour, J. W., Davis, R.F., and Astell-Burt, P., Science and Technol. of Microfab. 77, 185 (1987).Google Scholar
[15] van Daal, H. J., Philips Res. Rep. Suppl. 3, 48, 1 (1965).Google Scholar
[16] Rosengreen, A., Mat. Res. Bull. 4, 355 (1969).Google Scholar
[17] Yu. Altaiskii, M., Zaritskii, I.M., Zevin, V. Ya., and Konchits, A.A., Soy. Phys. Solid-State, 12, 2453 (1971).Google Scholar
[18] Casey, H. C., Jr., Ermanis, F.F., and Wolfstirn, K.B., J. Appl. Phys. 10, 2945 (1969).Google Scholar
[19] Davis, E. A., and Compton, W. Dale, Phys. Rev. 140, A2183 (1965).Google Scholar
[20] Debye, P. P., and Conwell, E.M., Phys. Rev. 93, 693 (1954).Google Scholar