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Spectroscopy Studies of InP Nanocrystals Synthesized Through a Fast Reaction

Published online by Cambridge University Press:  01 February 2011

Madalina Furis ,
David J. MacRae ,
D. W. Lucey ,
Yudhisthira Sahoo ,
Alexander N. Cartwright  and
Paras N. Prasad
Madalina Furis
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
David J. MacRae
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
D. W. Lucey
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
Yudhisthira Sahoo
Affiliation:
Institute for Lasers, Photonics and Biophotonics, University at Buffalo, Buffalo, NY, 14260, USA
Alexander N. Cartwright
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
Paras N. Prasad
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY, 14260, USA
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Abstract

We present spectroscopic characterization of InP nanocrystals grown through a fast reaction in a non-coordinating solvent. The photoluminescence (PL) spectra collected from these nanocrystals exhibit a sharp feature associated with the band-edge emission and a broad infrared feature associated with deep level surface trap emission. The emission efficiencies of the as-grown nanocrystals vary between 0.3% and 1% from sample to sample. After undergoing an HF etching process, the emission efficiency increases to 18% and the emission associated with surface states is eliminated from the PL spectrum. Time-resolved photoluminescence (TRPL) experiments conducted at room temperature on the as-grown and HF-etched nanocrystals show that before etching the PL intensity decay is multi-exponential, with a fast (3ns) component independent of wavelength, associated with the non-radiative recombination processes. The etching process effectively eliminates the non-radiative component and the post-etching PL decay can be fitted with a single exponential decay characterized by long (45ns) lifetimes. We tentatively associate these long lifetimes with the recombination of carriers from spin-forbidden states. This assignment is supported by the observation of a significant redshift of the feature associated with band-edge recombination in the PL spectrum with respect to the lowest energy feature in the photoluminescence excitation (PLE) spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N3.35
Copyright
Copyright © Materials Research Society 2004

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References

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