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Stratified Ion Damage and in Situ Regrowth in GaAs/AlAs Heterostructures

Published online by Cambridge University Press:  26 February 2011

A G Cullis ,
D J Eaglesham ,
D C Jacobson ,
J M Poate ,
C R Whitehouse  and
P W Smith
A G Cullis
Affiliation:
Royal Signals & Radar Establishment, St Andrews Rd, Malvern, Worcs WR14 3PS, UK
D J Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
D C Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
J M Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
C R Whitehouse
Affiliation:
Royal Signals & Radar Establishment, St Andrews Rd, Malvern, Worcs WR14 3PS, UK
P W Smith
Affiliation:
Royal Signals & Radar Establishment, St Andrews Rd, Malvern, Worcs WR14 3PS, UK
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Abstract

The material-dependent manner in which ion damage occurs in AlAs/GaAs heteroepitaxial structures is demonstrated using conventional and high resolution transmission electron microscopy. Both 150keV and 2MeV Si+ ion implants are employed over a wide range of ion doses. Under conditions which yield rapid build-up of lattice damage in GaAs, the AlAs is found to be relatively resistant to structure breakdown. Indeed, the crystalline AlAs exerts a novel protective effect on immediately adjacent regions of the GaAs layers. For high implantation doses amorphous-crystal superlattices are formed in multilayer structures. For the highest ion doses the AlAs lattice begins to be disrupted by a characteristic, boundary-dependent, heterogeneous mechanism. These observations suggest that mobile point defects play a significant role in AlAs in situ restructuring processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 221
Copyright
Copyright © Materials Research Society 1991

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References

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