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Stress distribution in polycrystalline silicon thin film solar cells on glass measured by micro-Raman spectroscopy
Published online by Cambridge University Press: 01 February 2011
Abstract
Micro-Raman spectroscopy is used to measure stress distributions in 1.5 µm thick polycrystalline silicon thin film solar cells on glass. These measurements are combined with transmission electron microscopy and atomic force microscopy to assign the measured local stresses to the sample's microstructure. Expansion and contraction of the silicon lattice in the layer and the borosilicate glass substrate during the thermal processing of the solar cell as well as quartz beads of µm size that reside on the glass substrate for light-trapping purposes induce internal stresses that locally vary with structural features. While the thermal processing induces an average tensile stress in the silicon layer originating from the thermal mismatch between glass and silicon, the latter results in lateral stress gradients up to 208 ± 12 MPa in the mapped area.
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- Copyright © Materials Research Society 2008
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