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Stresses in Multilayered Thin Films on a Thick Substrate

Published online by Cambridge University Press:  28 February 2011

E. Suhir
E. Suhir*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill New Jersey 07974.
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Abstract

The analysis contains an engineering method for the prediction of thermally induced stresses in single- and multilayered heteroepitaxial structures on a thick substrate. The examined stresses include 1) normal stresses acting in the film layers themselves and responsible for their ultimate and fatigue strength, and 2) interfacial stresses responsible for film blistering and peeling. The developed formulas are simple, visible, easy-to-use, and clearly indicate how material and structural characteristics affect the magnitude and the distribution of stresses and deflections. Some recommendations for smaller stresses in film structures are presented. The obtained results can be utilized as a guidance for an optimal physical design of multilayered heteroepitaxial structures used in Microelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 73
Copyright
Copyright © Materials Research Society 1987

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References

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