Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-30T22:34:01.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

Published online by Cambridge University Press:  30 May 2013

Shoko S. Ono ,
Yasuhisa Kayaba ,
Tsuneji Suzuki ,
Kazuo Kohmura  and
Hirofumi Tanaka
Shoko S. Ono
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Yasuhisa Kayaba
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Tsuneji Suzuki
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Kazuo Kohmura
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Hirofumi Tanaka
Affiliation:
R&D Center, Mitsui Chemicals, Inc., Japan
Get access

Abstract

Pore sealing has become a critical issue for the implementation of porous low-k dielectrics and for realizing acceptable reliability performance of the interconnect. This study focuses on fabrication of ultra-thin, conformal and plasma resistant pore seal layer and on understanding parameters playing a role in sealing the surfaces of porous low-k films. It was found that 2.5 nm-thick pore seal layer shows a perfect toluene seal property for the porous low-k film whose pore radius is 1.48 nm. The pore seal layer still show a good toluene seal property after irradiation of He plasma at 250°C for 10 sec. The increments of dielectric constant by applying the pore seal layer and by the He plasma irradiation for 10 sec are 0.04 and 0.03, respectively. Interestingly, all of toluene seal property, refractive index of the bottom part of the film and dielectric constant started to deteriorate after irradiation of He plasma for 20 sec. It was suggested that when toluene seal property degrades, plasma would start diffusing into pores and both refractive index of the bottom part of the film and k value start to increase.

Keywords

diffusiondielectricporosimetry
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa06-04
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Maex, K., Baklanov, M. R., Shamiryan, D., Iacopi, F., Brongersma, S. and Yanovitskaya, Z. Sh., J. Appl. Phys., 8793 (2003).CrossRefGoogle Scholar
Elshocht, S. V., Delabie, A., Dewilde, S., Meersschaut, J., Swerts, J., Tielens, H., Verdonck, P., Witters, T., and Vancoille, E., ECS, 1839 (2011).Google Scholar
Chung, H., Chang, M., Chu, S., Kumar, N., Goto, K., Maity, N., Sankaranarayanan, S., Okamura, H., Ohtsuka, N., Ogawa, S., IEEE 454, 456, (2003).Google Scholar
Kim, H., Detavenier, C., van der Straten, O., Rossnagel, S. M., Kellock, A. J., and Park, D.-G., J. Appl. Phys. 98, 014308 (2005)CrossRefGoogle Scholar
Caro, A. M., Maes, G., Borghs, G., and Whelan, C., Microelectron. Eng. 85(10), 2047–2050 (2008)CrossRefGoogle Scholar
Gandhi, D. D., Lane, M., Zhou, Y., Singh, A. P., Nayak, S., Tisch, U., Eizenberg, M., and Ramanath, G., Nature 447(7142), 299–U292 (2007).CrossRefGoogle Scholar
Ganesa, P. G., Singh, A. P., and Ramanath, G., Appl. Phys. Lett. 85(4), 579–581 (2004).CrossRefGoogle Scholar
Caro, A. M., Maes, G., Borghs, G., Armini, S., and Travaly, Y., Mater. Res. Soc. Symp. Proc. 1249-F02-01 (2010).Google Scholar
George, S. M., Yoon, B., and Dameron, A. A., Acc. Chem. Res. 42(4), 498–508 (2009).CrossRefGoogle Scholar
Loscutoff, P. W., Zhou, H., Clendenning, S. B., and Bent, S. F., ACS Nano 4(1), 331–341 (2010).CrossRefGoogle Scholar
Loscutoff, P. W., Clendenning, S. B., and Bent, S. F., Mater. Res. Soc. Symp. Proc. 1249-F02-03 (2010).Google Scholar
Iacopi, F., Zistl, C., Jehoul, C., Tokei, Zs., Lea, Q.T., Das, A., Sullivan, C., Prokopowicz, G., Gronbeck, D., Gallagher, M., Calvert, J., Maex, K., Microelectronic Engineering 64, 351, (2002).CrossRefGoogle Scholar
Hijioka, K., Inoue, N., Kume, I., Kawahara, J., Furutake, N., Shirai, H., Itoh, T., Ogura, T., Kazama, K., Yamamoto, Y., Kasama, Y., Katsuyama, H., Manabe, K., Yamamoto, H., Saito, S., Hase, T., and Hayashi, Y., IEDM10–756.Google Scholar
Frot, T., Volksen, W., Purushothaman, S., Bruce, R., Dubois, G., Adv. Mater. 23, 2828 (2011).CrossRefGoogle Scholar
Ono, S. S., Kohmura, K., Tanaka, H., Nakayama, K., Kagayama, A., Tsuchiya, T., Nakaura, M., Matsuoka, O., Takaki, T. and Maekawa, K., Mater. Res. Soc. Symp. Proc. 1249-F06-03 (2010).Google Scholar
Ono, S. S., Kohmura, K., Tanaka, H., Kayaba, Y., Kikkawa, T. Mater. Res. Soc. Symp. Proc. 1335, 21 (2011).CrossRefGoogle Scholar
Ono, S. S., Kayaba, Y., Suzuki, T., Tanaka, H., Kohmura, K., Mater. Res. Soc. Symp. Proc. 1428, (2012).Google Scholar
Baklanov, M. R., Mogilnikov, K. P., Yim, J.-H., Mat. Res. Soc. Symp. Proc. 812, F5.4.1, (2004)CrossRefGoogle Scholar