Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-12T11:02:48.513Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

Published online by Cambridge University Press:  25 February 2011

Hong Koo Kim  and
Michelle Mathur
Hong Koo Kim
Affiliation:
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA 15261
Michelle Mathur
Affiliation:
Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA 15261
Get access

Abstract

Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 317
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hickernell, F. S., Mat. Res. Soc. Symp. Procd. 47, 63 (1985).CrossRefGoogle Scholar
2. Shlosaki, T. and Kawabata, A., Piezoelectricity ed. by Taylor, G. W., Gordon and Breach Science Publishers, 327 (1985).Google Scholar
3. Martin, S. J., Schwartz, S. S., Gunshor, R. L., and Pierret, R. F., J. Appl. Phys. 54, 561 (1983).CrossRefGoogle Scholar
4. Francombe, M. H. and Krishnaswamy, S. V., J. Vac. Sci. Technol. A (8), 1382 (1990).Google Scholar
5. Krupanidhi, S. B. and Sayer, M., J. Appl. Phys. 56, 3308 (1984).CrossRefGoogle Scholar
6. Ristic, V. Principles of Acoustic Devices, John Wiley & Sons, New York, 1983.Google Scholar