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Structure and Electrical Properties of Yttria Stabilized Zirconia by Iron Ion Implantation

Published online by Cambridge University Press:  22 February 2011

Wang Guomei  and
Qu Zuyuan
Wang Guomei
Affiliation:
Wuhan University of Technology, Department of Materials Engineering, Wuhan 430070, China
Qu Zuyuan
Affiliation:
Wuhan University of Technology, Department of Materials Engineering, Wuhan 430070, China
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Abstract

Fe ions were implanted into yttria stabilized zirconia with doses of 5×1015 -2×1017 ions/cm2 at an energy of 140 KeV. The effects of Fe-implanted zirconia and post-implantation thermal annealing on electrical properties and structure of an implanted layer were studies by electric measurement, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). It was found that the resistivity for the as-implanted sample decreased greatly with increasing ion dose, and at high dose the resistivity decreasing gradually. After annealing at 1200°C in N2 environment, the resistivity relative to that for the as-implanted sample had clearly marked decreases. Results of the XRD and XPS measurements showed that the implanted Fe ion was mainly in a charge state of Fe2+ and the sections of Fe2+ were incorporated into the ZrO2 lattice, forming a FeZrO3 compound. Finally, the conductivity mechanisms were discussed briefly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 367
Copyright
Copyright © Materials Research Society 1994

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References

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