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Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

Published online by Cambridge University Press:  10 February 2011

H. Wang ,
Z. Wang ,
S. X. Shang  and
M. Wang
H. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, China
Z. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, China
S. X. Shang
Affiliation:
Dept. of Environment Engineering, Shandong University, Jinan 250100, China
M. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan 250100, China
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Abstract

Ferroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 477
Copyright
Copyright © Materials Research Society 1998

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References

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