Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T09:40:29.511Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111)

Published online by Cambridge University Press:  17 March 2011

A. R. Kortan ,
M. Hong ,
J. Kwo ,
P. Chang ,
C. P. Chen ,
J. P. Mannaerts  and
S. H. Liou
A. R. Kortan
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
M. Hong
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
J. Kwo
Affiliation:
Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan
P. Chang
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
C. P. Chen
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
J. P. Mannaerts
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
S. H. Liou
Affiliation:
Department of Physics, University of Nebraska, Lincoln, Nebraska, USA
Get access

Abstract

We have characterized the structure of the epitaxial Sc2O3 films grown on a α-Al2O3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc2O3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E1.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hong, M., Kwo, J., Kortan, A. R., Mannaerts, J. P., and Sergent, A. M., Science, 283, pp.1897–1900, 1999.Google Scholar
2. Hong, M., Kortan, A. R., Ng, H. M., Kwo, J., Chu, S. N. G., Mannaerts, J. P., Cho, A. Y., Lee, C. M., Chyi, J. I., and Anselm, K. A., J. Vac. Sci. Technol. B 20(3), 1274, 2002.Google Scholar
3. Gila, B. P., Johnson, J. W., Mehandru, R., Luo, B., Onstine, A. H., Allums, K. K., Krishnamoorthy, V., Bates, S., Abernathy, C.R., Ren, F., Pearton, S.J., Phys. Stat. Sol. (a) 188, 239, 2001.Google Scholar
4. Kim, J., Mehandru, R., Luo, B., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Irokawa, Y., Applied Physics Letters, 81, 373, 2002.Google Scholar
5. Kortan, A. R., Hong, M., and Kwo, J., unpublished results, 2002.Google Scholar