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Studies of Defects in ZnO by Positron Annihilation

Published online by Cambridge University Press:  26 February 2011

Werner Puff ,
Sebastian Brunner ,
Peter Mascher  and
Adam G. Balogh
Werner Puff
Affiliation:
Institut für Kernphysik, Technische Univerisität Graz, Petersgasse 16, A-8010 Graz, Austria
Sebastian Brunner
Affiliation:
Institut für Kernphysik, Technische Univerisität Graz, Petersgasse 16, A-8010 Graz, Austria
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada
Adam G. Balogh
Affiliation:
FB Materialwissenschaft, FG Dünne Schichten, Technische Hochschule Darmstadt, Hilpertstraße 31, 64295 Darmstadt, Germany
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Abstract

In order to investigate the basic properties of radiation-induced defects in ZnO crystals, positron annihilation lifetime and Doppler-broadening measurements were performed on crystals sinterd for 18 hours at 1200 °C and irradiated with 3 MeV protons at 223 K. The irradiation induced a colour change of the specimens from the original yellowish-white to dark orange or even brown. Isochronal annealing experiments showed three annealing stages, centred at about 150 °C, 500 – 550 °C, and 750 °C, respectively. These stages are related to the annealing of variously sized vacancy complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 977
Copyright
Copyright © Materials Research Society 1995

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References

1 Vehse, W.E., Sibley, W.A., Keller, F.J. and Chen, Y., Phys. Rev. 167, 828 (1968)Google Scholar
2 Smith, J.M. and Vehse, W.E., Phys. Lett A 31, 147 (1970)Google Scholar
3 Taylor, A.L., Filipovich, G. and Lindeberg, G.K., Solid State Commun. 8, 1359 (1970)Google Scholar
4 Locker, D. R. and Meese, J.M., I.E.E.E. Trans. Nucl. Sci., 19, 237 (1972)Google Scholar
5 Galland, D. and Herve, A., Solid State Commun. 14, 953 (1974)Google Scholar
6 Schallenberger, B. and Hausmann, A., Z. Physik B 23, 177 (1976)Google Scholar
7 Schallenberger, B. and Hausmann, A., Z. Physik B 44, 143 (1981)Google Scholar
8 Poppl, A. and Volkel, G., phys. stat. sol. (a) 125, 571 (1991)Google Scholar
9 Watkins, G.D., in Proc. Int. Conf. Rad. Effects in Semiconductors, (Inst. Phys., London, 1977) pp. 95 Google Scholar
10 Dannefaer, S., in Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers, North Holland, 1990) pp. 1561 Google Scholar
11 Noguchi, M., Mitsuhashi, T., Chiba, T., Tanaka, T., and Tsuda, N., J. Phys. Soc. Japan 32, 1242 (1972)Google Scholar
12 Pareja, R., Pedrosa, M. A., and Gonzales, , in Positron Annihilation, edited by Jain, P.C., Singru, R.M., and Gopinathan, K.P. (World Scientific Publ. Co., Songapore, 1985) pp. 708 Google Scholar
13 Fernandez, P., de Diego, N., del Río, J., and Llopis, J., J. Phys.: Condens. Matter 1, 4853 (1989)Google Scholar
14 Gupta, T.K., Straub, W.D., Ramanachalam, M.S., Schaffer, J.P., and Rohatgi, A., J. Appl. Phys. 66, 6132 (1989)Google Scholar
15 Ramanachalam, M.S., Rohatgi, A., Schaffer, J.P., and Gupta, T.K., J. Appl. Phys. 30, 8380 (1991)Google Scholar
16 Dai, G.H., Yan, Q.J., Wang, Y., and Liu, Q.S., Chem. Phys. 155, 275 (1991)Google Scholar
17 Miyajima, T., Okuyama, H., Akimoto, K., Mori, Y., Wei, L., and Tanigawa, S., Appl. Phys. Lett. 59, 1482 (1991)Google Scholar
18 Zhong, J., Kitai, A.H., Mascher, P., and Puff, W., J. Electrochem. Soc. 140, 3644 (1993)Google Scholar
19 Puff, W., Brunner, S., and Mascher, P., The Physics of Semiconductors, edited by Lockwood, D.J. (World Scientific Publ., Singapore, 1995) pp. 2439 Google Scholar
20 de la Cruz, R.M., Pareja, R., Gonzáles, R., Boatner, L.A., and Chen, Y., Phys. Rev. B 45, 6581 (1992)Google Scholar
21 Tomiyama, N., Takenaka, M., and Kuramoto, E., Materials Sci. Forum 105–110, 1281 (1992)Google Scholar
22 Puff, W., Comput. Phys. Commun. 30, 359 (1983)Google Scholar
23 Hautojärvi, P., Positrons in Solids (Springer, Berlin, 1979)Google Scholar
24 Dlubek, G. and Krause, R., phys. stat. sol. (a) 102, 443 (1987)Google Scholar
25 Puska, M.J., Corbel, C. and Nieminen, R.M., Phys. Rev. B 41, 9980 (1990)Google Scholar