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Studies of MZS and MZOS Structures with Zinc Oxide Deposited by Conventional Rf Diode and Magnetron Sputtering Techniques

Published online by Cambridge University Press:  26 February 2011

S. N. Venkatesh ,
E. S. Ramakrishnan ,
K. C. Jungling  and
S. B. Krupanidhi
S. N. Venkatesh
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM-87131
E. S. Ramakrishnan
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM-87131
K. C. Jungling
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM-87131
S. B. Krupanidhi
Affiliation:
Motorola Inc, Albuquerque, NM-87113
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Abstract

Highly crystalline and c-axis oriented zinc oxide thin films were sputter deposited from a ceramic target using rf diode and magnetron sputtering techniques. A comparative evaluation of structure and electrical characteristics of ZnO films in the MZS and MZOS configurations is presented and the results are discussed. The physical and electrical properties were significantly influenced by highly energetic particles originating from the presence of oxygen neutrals in the plasma during the growth process and the behavior differed between the diode and magnetron sputtering processes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 289
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Hammer, J.M., Channinad, D.J. and Duffy, M.T., Appl. Phys. Lett. 23, 176 (1973)Google Scholar
2. Hickernell, F.S., IEEE Ultrasonic Symp. Proc., Vol. 1 (IEEE, NY 1980)Google Scholar
3. Khuri-Yakub, B.T., Kino, G.S. and Galle, P., J. Appl. Phys, 46, 3266 (1975)Google Scholar
4. Shimuzu, M., Shiosaki, T. and Kawabata, A., J. Cryst. Griwth, 57, 94 (1982)Google Scholar
5. Rosgonyi, G.A. and Polito, W.J., J. Vac. Sci. Tech. 6, 115 (1976)Google Scholar
6. Maniv, S., Westwood, W.D. and Columbina, E., J. Vac. Sci. Tech., 20, 162 (1982)Google Scholar
7. Krupanidhi, S.B. and Sayer, M., J. Appl. Phys. 56, 3308 (1984)Google Scholar
8. Tominaga, K., Ueshiba, N., Shintani, Y. and Tada, O., Jpn. J. Appl. Phys. 20, Suppl.3, 519 (1981)Google Scholar
9. Cornell, M.E., Elliot, J.K., Gunshorabd, R.L., Pierrett, R.F., Appl. Phys. Lett., 31, 560 (1977)Google Scholar
10. Sakai, T. and Sato, Y., Jpn. J. Appl. Phys. 21, Suppl. 21–3, 66(1982)Google Scholar