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A Study of Semiconductor Quantum Structures by Microwave Modulated Photolumenescence

Published online by Cambridge University Press:  10 February 2011

R. Guliamov ,
E. Lifshitz ,
E. Cohen ,
A. Ron  and
H. Shtrikman
R. Guliamov
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
E. Lifshitz
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
E. Cohen
Affiliation:
Department of Physics and Solid State Institute, Technion, Haifa, 32000, Israel
A. Ron
Affiliation:
Department of Chemistry and Solid State Institute, Technion, Haifa, 32000, Israel
H. Shtrikman
Affiliation:
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot, Israel, ssefrat@tx.technion.ac.il
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Abstract

Mixed types I - type II multiple quantum wells (QW) structures consist of alternating narrow- and wide GaAs wells, separated by AlAs barriers. Transfer of electrons from the narrow- to the wide well results in the formation of a two-dimensional electron gas (2DEG) in the wide wells and a hole gas (2DHG) in the narrow ones. The present study investigated the effect of these gases on the various photoluminescence (PL) bands. The study utilized two modulations techniques: double beam PL and microwave modulated PL (MMPL), offering high-resolution spectroscopy, control of the 2DEG density and effective temperature. The results showed that the formation of a low density 2DEG in the wide wells cause the formation of trions. However, a large density of excess electrons makes mutual collisions with other photo-generated species, causing the dissociation of the trions and excitons. In addition, electrons transfer through the barrier gives rise to barrier-well indirect recombination emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 119
Copyright
Copyright © Materials Research Society 1999

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References

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