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A Study of the Interface Between THM Grown MCT Crystals and Cdte Seeds.

Published online by Cambridge University Press:  25 February 2011

I. Shilo ,
E. Kedar  and
D. Szafranek
I. Shilo
Affiliation:
Semi-Conductor Devices, Jerusalem 91082
E. Kedar
Affiliation:
Semi-Conductor Devices, Jerusalem 91082
D. Szafranek
Affiliation:
Institute of Earth Sciences, The Hebrew University of Jerusalem, 91904, Israel
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Abstract

HgCdTe crystals have been grown from CdTe seeds by the travelling heater method (THM). Three different kinds of interfaces between the growing crystal and the seed were found: a sharp planar interface; a non-planar interface which is caused by meltback near the ampoule walls; a diffuse zone, where an interface cannot be discerned. A correlation was found between the initial growth parameters and the interface structure. Microprobe analysis revealed a boundary layer which, in the case of the planar interface, had an unusual shape. This layer had a thickness varying from 400 to 800 microns. It consisted mostly of HgTe, and contained holes as defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 47
Copyright
Copyright © Materials Research Society 1991

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References

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