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Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

Published online by Cambridge University Press:  15 February 2011

Tomoyasu Inoue ,
Yasuhiro Yamamoto ,
Masataka Satoh ,
Tetsu Ohsuna ,
Hiroaki Myoren  and
Tsutomu Yamashita
Tomoyasu Inoue
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Yasuhiro Yamamoto
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Masataka Satoh
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan
Tetsu Ohsuna
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Hiroaki Myoren
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan
Tsutomu Yamashita
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan
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Abstract

The substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 101
Copyright
Copyright © Materials Research Society 1994

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References

[1] Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S. and Ueda, Y., Appl. Phys. Lett. 56, 1332 (1990).CrossRefGoogle Scholar
[2] Nagata, H., Tsukahara, T., Gonda, S., Yoshimoto, M., and Koinuma, H., Jpn. J. Appl. Phys. 30, L1136 (1991).CrossRefGoogle Scholar
[3] Inoue, T., Ohsuna, T., Luo, L., Wu, X. D., Maggiore, C. J., Yamamoto, Y., Sakurai, Y. and Chang, J. H., Appl. Phys. Lett. 59, 3604 (1991).CrossRefGoogle Scholar
[4] Inoue, T., Ohusuna, T., Yamada, Y., Wakamatsu, K., Itoh, Y., Nozawa, T., Sasaki, E., Yamamoto, Y. and Sakurai, Y., Jpn. J. Appl. Phys. 31, L1736 (1992).CrossRefGoogle Scholar
[5] Inoue, T., Obara, Y., Yamamoto, Y., Satoh, M. and Sakurai, Y.: Jpn. J. Appl. Phys. 32, L1765 (1993).CrossRefGoogle Scholar
[6] Inoue, T., Ohsuna, T., Obara, Y., Yamamoto, Y., Satoh, M. and Sakurai, Y.: J. Cryst. Growth 131, 347 (1993).CrossRefGoogle Scholar
[7] Yaegashi, S., Kurihara, T., Hoshi, H. and Segawa, H., Jpn. J. Appl. Phys. 33, 270 (1994).CrossRefGoogle Scholar
[8] Satoh, M., Yamamoto, Y., Nakajima, S., Sakurai, Y., Inoue, T. and Ohsuna, T., Mat. Res. Soc. Symp. Proc. Vol.312, 309 (1993).CrossRefGoogle Scholar
[9] Chadi, D. J., Phys. Rev. Lett. 59, 1691 (1987).CrossRefGoogle Scholar