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Sublimation Growth and Defect Characterization of AlN Single Crystals

Published online by Cambridge University Press:  01 February 2011

Shaoping Wang ,
Balaji Raghothamachar ,
Michael Dudley ,
Zaiyuan Ren ,
Jung Han  and
Andrew G. Timmerman
Shaoping Wang
Affiliation:
swang@fairfieldcrystal.com, Fairfield Crystal Technology, LLC, R&D, 8 South End Plaza, New Milford, CT, 06776, United States, 860-354-2111
Balaji Raghothamachar
Affiliation:
braghoth@notes.cc.sunysb.edu, State University of New York at Stony Brook, Department of Materials Science & Engineering, Stony Brook, NY, 11794, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, State University of New York at Stony Brook, Department of Materials Science & Engineering, Stony Brook, NY, 11794, United States
Zaiyuan Ren
Affiliation:
zaiyuan.ren@yale.edu, Yale University, Department of Electrical Engineering, 15 Prospect Street, New Haven, CT, 06520, United States
Jung Han
Affiliation:
jung.han@yale.edu, Yale University, Department of Electrical Engineering, 15 Prospect Street, New Haven, CT, 06520, United States
Andrew G. Timmerman
Affiliation:
atimmerman@fairfieldcrystal.com, Fairfield Crystal Technology, LLC, 8 South End Plaza, New Milford, CT, 06776, United States
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Abstract

In this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

Keywords

crystal growthdefectsx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q03-01
Copyright
Copyright © Materials Research Society 2008

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References

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