Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-01T19:46:15.814Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate Heating Effects in Excimer Laser Planarization of Aluminum

Published online by Cambridge University Press:  21 February 2011

Robert J. Baseman  and
Joseph C. Andreshak
Robert J. Baseman
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Joseph C. Andreshak
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

Substantial improvements in excimer laser planarization processes are observed with substrate heating. Cavities, associated with filling of high aspect ratio vias at low substrate temperature, can be eliminated by substrate heating. Damage associated with pulse overlap regions can be temperature sensitive, and is reduced as substrate temperatures areincreased. While required fluences for planarization and sample damage both decrease as the sample temperature increases, the relative insensitivity of the damage threshold generally results in larger process windows at higher temperatures. We also report model calculations of the effect of substrate heating on sample temperature distributions and the durations of the laser driven melts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 267
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Tuckerman, D.B., Schmitt, R.L., Proc. 1985 V-MIC Conf., 24 (1985); D.B. Tuckerman, A.H. Weisberg, IEEE Electron Device Letters, EDL-7, 1 (1986); D.B. Tuckerman, A.H. Weisberg, Solid State Technology, 29, 129 (1986).Google Scholar
2) Mukai, R., Sasaki, N., Nakano, M., IEEE Electron Device Letters, EDL–8, 76 (1987); R. Mukai, N. Sasaki, M. Nakano, in Beam-Solid Interactions and Transient Processes, edited by S.T. Picraux, M.O. Thompson, J.S. Williams (Mater. Res. Soc. Proc. 744, Pittsburgh, PA 1987) pp.229-234; R. Mukai, K. Kobayashi, M. Nakano, Proc. 1988 V-MIC Conf., 101 (1988).Google Scholar
3) Baseman, R.J. and Andreshak, J.C. in Fundamentals of Beam-Solid Interactions and Transient Thermal Processing, edited by Aziz, M.J., Rehn, L.E., and Stritzker, B., Mater. Res. Soc. Proc. No. 100 (Materials Research Society, Pittsburgh, PA, 1988), pp. 627–633.Google Scholar
4) Marella, P.F., Tuckerman, D.B., and Pease, R.F., Appl. Phys. Lett., 54, 1109 (1989).Google Scholar
5) Marella, P.F., Tuckerman, D.B., and Pease, R.F., in Laser and Particle-Beam Modification of Chemical Processes on Surfaces, edited by Johnson, A.W., Loper, G.L., and Sigmon, T.W., Mater. Res. Soc. Proc. No. 129 (Materials Research Society, Pittsburgh, PA, 1989) in press.Google Scholar
6) Bernhardt, A.F. and Contolini, R.J., in Laser and Particle-Beam Modification of Chemical Processes on Surfaces, edited by Johnson, A.W., Loper, G.L., and Sigmon, T.W., Mater. Res. Soc. Proc. No. 129 (Materials Research Society, Pittsburgh, PA, 1989) in press.Google Scholar
7) Liu, R., Cheung, K.P., Lai, W.Y.-C., Heim, R., in Proceedings of the 1989 VLSI Multilevel Interconnection Conference (V-MIC) (IEEE, New York, New York, 1989), pp. 329–335.Google Scholar
8) Baseman, R.J., to be published in J. Vac. Sci. Technol. B., Jan./Feb. 1990.Google Scholar
9) Baseman, R.J., Andreshak, J.C., Gupta, A., Ting, C-Y., Schnitzel, R.H., and Havas, J., in Selected Topics in Electronic Materials, edited by Appleton, B.R., Biegelsen, D.K., Brown, W.L., and Knapp, J.A., MRS Extended Abstracts, Vol. EA–18 (Materials Research Society, Pittsburgh, PA, 1988) pp. 259–262.Google Scholar