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Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

Published online by Cambridge University Press:  15 February 2011

S. M. Cho
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
K. Christensen
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
D. Wolfe
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
H. Ying
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
D. R. Lee
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
D. M. Maher
Affiliation:
North Carolina State University, Department of Physics, Materials Science and Engineering, Electrical and Computer Engineering, Raleigh, N.C. 27695-8202
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Abstract

We have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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