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Subsurface Damage Profile Characterization of Si Wafers with Uv/Millimeter-Wave Technique and Light Scattering Topography

Published online by Cambridge University Press:  10 February 2011

Takeo Katoh ,
Hideyuki Kondo ,
Yoh-Ichiro Ogita ,
Ken-Ichi Kobayashi  and
Masaki Kurokawa
Takeo Katoh
Affiliation:
Mitsubishi Materials Corp., Silicon Research Center, 1–297 Kitabukuro-cho, Omiya, Saitama, 330–8508, JAPAN, E-mail: tkatoh@mmc.co.jp
Hideyuki Kondo
Affiliation:
Mitsubishi Materials Corp., Silicon Research Center, 1–297 Kitabukuro-cho, Omiya, Saitama, 330–8508, JAPAN, E-mail: tkatoh@mmc.co.jp
Yoh-Ichiro Ogita
Affiliation:
Kanagawa Inst. Tech., Dept. Electrical & Electronic Engineering, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, JAPAN, E-mail: tkatoh@mmc.co.jp
Ken-Ichi Kobayashi
Affiliation:
Kanagawa Inst. Tech., Dept. Electrical & Electronic Engineering, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, JAPAN, E-mail: tkatoh@mmc.co.jp
Masaki Kurokawa
Affiliation:
Kanagawa Inst. Tech., Dept. Electrical & Electronic Engineering, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, JAPAN, E-mail: tkatoh@mmc.co.jp
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Abstract

We have characterized subsurface damage profiles of hydrogen-ion implanted silicon wafers by using a non-contact UV/Millimeter-Wave Technique and Light Scattering Topography (LST). A subsurface damage profile that was less than one micrometer was controlled by chemical mechanical polishing after hydrogen-ion implantation. On the area with the subsurface damage, the Photoconductivity Amplitude (PCA) signals measured by the UV/Millimeter-Wave Technique drastically weakened and the haze values measured by LST increased. A clear correlation has been found between the peak depth of the subsurface damage and the haze value. The spectral analyses of the surface images obtained by Atomic Force Microscopy (AFM) were carried out in order to separate the influences of surface micro roughness and subsurface damage on the haze value. The contribution of subsurface damage to the haze value can be formulated as the convolution of the damage profile and the transparency function of the incident laser in silicon crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 631: Symposium AA – Millimeter-/Submillimeter-Wave Technology Materials, Devices and Diagnostics , 2000 , AA1.9
Copyright
Copyright © Materials Research Society 2000

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References

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