Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T10:42:05.753Z Has data issue: false hasContentIssue false
  • English
  • Français

Suppression of Interfacial Mixing by Sb Deposition in Si/Ge Strained-Layer Superlattices

Published online by Cambridge University Press:  22 February 2011

K. Fujita ,
S. Fukatsu ,
H. Yaguchi ,
T. Igarashi ,
Y. Shiraki  and
R. Ito
K. Fujita
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
S. Fukatsu
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
H. Yaguchi
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
T. Igarashi
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Shiraki
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
R. Ito
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
Get access

Extract

We have studied interfacial mixing of Si/Ge strained-layer superlattices during Si molecular beam epitaxy. The mixing has been shown to be primarily due to the surface segregation of Ge atoms during Si overlayer growth. It has been found that only the Ge atoms on the topmost Ge layer dominantly segregate to the growing surface. It has also been found that the surface segregation of Ge is effectively suppressed by depositing Sb atoms on the Ge layers. It has been demonstrated that Si/Ge superlattices with abrupt Si/Ge interfaces can be grown by depositing Sb. The two state exchange model is used to discuss the surface segregation of Ge and the suppression of the segregation by Sb deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 193
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Eberl, K., Krötz, G., Zachai, R. and Abstreiter, G., J. Phys. Colloq. C (Paris) 5, 329 (1987).Google Scholar
2 Copel, M., Reuter, C., Kaxiras, E. and Tromp, R. M., Phys. Rev. Lett. 63, 632 (1989).CrossRefGoogle Scholar
3 Zalm, P. C., van de Walle, G. F. A., Gravesteijn, D. J. and van Gorkum, A. A., Appl. Phys. Lett. 55, 2520 (1989).CrossRefGoogle Scholar
4 Fujita, K., Fukatsu, S., Yaguchi, H., Igarashi, T., Shiraki, Y. and Ito, R., Jpn J. Appl. Phys, 22, L1981 (1990).CrossRefGoogle Scholar
5 Harris, J. J., Ashford, D. E., Foxon, C. T., Dobson, P. J. and AJoyce, B., Appl. Phys. A 33 87 (1984).CrossRefGoogle Scholar
6 Barnett, S. A. and Green, J. E., Surf. Sci. 151, 67 (1985).CrossRefGoogle Scholar
7 Nakagawa, K. and Miyao, M., J. Appl. Phys (in press).Google Scholar
8 Jorke, H. and Kibbel, H., Appl. Phys. Lett, 52, 1763 (1990).CrossRefGoogle Scholar