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Surface Processes in Laser-Induced Etching of Silicon Studied by X-Ray Photoelectron Spectroscopy

Published online by Cambridge University Press:  28 February 2011

Masataka Hirose  and
Tsuyoshi Ogura
Masataka Hirose
Affiliation:
Research Center for Integrated Systems, Hiroshima University Higashihiroshima 724, Japan
Tsuyoshi Ogura
Affiliation:
Research Center for Integrated Systems, Hiroshima University Higashihiroshima 724, Japan
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Abstract

A silicon surface exposed to NF3 gas was irradiated with an ArF excimer laser beam. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. It was found that SiFX (1≤X≤4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly SiF4 and SiF3. A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 357
Copyright
Copyright © Materials Research Society 1987

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