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Surface Waves and Strain Modulations in Si1-xGex Alloy Layers on Si

Published online by Cambridge University Press:  25 February 2011

A. G. Cullis ,
D. J. Robbins ,
A. J. Pidduck  and
P. W. Smith
A. G. Cullis
Affiliation:
DRA Malvern, RSRE, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D. J. Robbins
Affiliation:
DRA Malvern, RSRE, St Andrews Road, Malvern, Worcs WR14 3PS, UK
A. J. Pidduck
Affiliation:
DRA Malvern, RSRE, St Andrews Road, Malvern, Worcs WR14 3PS, UK
P. W. Smith
Affiliation:
DRA Malvern, RSRE, St Andrews Road, Malvern, Worcs WR14 3PS, UK
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Abstract

The growth of strained, continuous Si1-xGex epitaxial alloy layers on Si can, under certain conditions, result in the occurrence of marked, small-scale layer thickness fluctuations in the form of crystallographically-aligned, interlocking ripple arrays. In the present work, combined transmission electron microscope (TEM) and atomic force microscope studies are employed to reveal the detailed nature of these surface ripples. TEM contrast studies demonstrate that well-defined, oscillatory strain variations accompany these ripple structures, the presence of which is shown to be associated with partial elastic strain-relief and lowering of the energy of die strained-layer system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 383
Copyright
Copyright © Materials Research Society 1993

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References

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