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The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  11 February 2011

J.G. Cederberg  and
R.M. Biefeld
J.G. Cederberg
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185–0601
R.M. Biefeld
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185–0601
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Abstract

We have investigated InAsSb nanostructures formed on GaAs during MOCVD. The transition thickness from 2D growth to 3D growth is reduced by the addition of TMSb/Sb4. This is consistent with both an increase in the adatom diffusion length and a reduction in the epilayer/vapor surface energy attributed TMSb/Sb4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W2.6
Copyright
Copyright © Materials Research Society 2003

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References

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