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Surfactant-Mediated Si/Ge Epitaxial Crystal Growth

Published online by Cambridge University Press:  03 September 2012

Eunja Kim ,
Chan Wuk OH  and
Young Hee Lee
Chan Wuk OH
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, 561-756, Korea
Young Hee Lee
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, 561-756, Korea
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Abstract

We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 135
Copyright
Copyright © Materials Research Society 1997

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