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Synthesis and Optical Characterization of Er-Doped GaN Low-Dimensional Structures

Published online by Cambridge University Press:  01 February 2011

Joan Carvajal ,
Magdalena Aguilo ,
Francesc Diaz  and
J. Carlos Rojo
Joan Carvajal
Affiliation:
joan.carvajal@stonybrook.edu, State University of New York, Dept. Materials Science & Engineering, 315, Old Engineering Building, Stony Brook, New York, 11794-2275, United States, 631-632-8505
Magdalena Aguilo
Affiliation:
magdalena.aguilo@urv.cat, Universitat Rovira i Virgili, Physics and Crystallography of Materials (FiCMA), Tarragona, N/A, 43007, Spain
Francesc Diaz
Affiliation:
f.diaz@urv.cat, Universitat Rovira i Virgili, Physics and Crystallography of Materials (FiCMA), Tarragona, N/A, 43007, Spain
J. Carlos Rojo
Affiliation:
jrojo@notes.cc.sunysb.edu, State University of New York, Materials Science & Engineering, Stony Brook, New York, 11794, United States
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Abstract

Er-doped GaN rod-shaped low-dimensional structures have been synthesized on the surface of a silicon (001) substrate by the direct reaction of Ga, NH3 and Er using a catalyst-assisted chemical vapor deposition technique. The low-dimensional nanostructures were characterized spectrocopically analyzing the hypersensitive 4G11/2 and 2H11/2 bands of Er3+ located at 375 and 425 nm, respectively. Green and near-infrared (IR) emission produced by these Er-doped GaN low-dimensional structures has been observed under excitation at 488 and 543 nm in a confocal microscope.

Keywords

lanthanidechemical vapor deposition (CVD) (chemical reaction)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 940: Symposium P – Semiconductor Nanowires – Fabrication, Physical Properties, and Applications , 2006 , 0940-P08-14
Copyright
Copyright © Materials Research Society 2006

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