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Technological Prospects for Germanium Silicide Epitaxy

Published online by Cambridge University Press:  21 February 2011

John C. Bean
John C. Bean*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

This paper describes preliminary device work on GexSi1−x, based devices and examines progress towards the realization of a silicon based heterostructure technology. Target areas for further work are identified including: An enhanced understanding of metastable-growth processes; The need for defect confinement in discommensurate epitaxy; Elimination of manufacturing barriers caused by particulate induced defects in MBE and low growth rates in low temperature CVD.

Over the last five years, studies of GexSi1−x have yielded an understanding of crystal growth mechanisms and information on electrical and optical properties such as bandstructure and heterojunction band alignment. These in turn lead to a number of preliminary device applications including optical detectors, modulation doped transistors and heterojunction bipolar transistors. In this paper, I will try to answer the question posed by the symposium organizers: In the germanium silicide system, has our understanding and experience reached the point that we have the basis for a technology, and if not, where must further work be done?

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 111
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] For a review see: Bean, J. C., Silicon Based Semiconductor Heterostructures, Chapter 9 in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla. (1988).Google Scholar
[2] Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T. and Lynch, R. T., Appl. Phys. Lett. 44, 102 (1984).Google Scholar
[3] Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S. and Robinson, I. K., J. Vac. Sci. Technol. A2, 436 (1984).Google Scholar
[4] Gronet, C., Stanford University, Private Communication.Google Scholar
[5] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 205 (1949).Google Scholar
[6] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 216 (1949).Google Scholar
[7] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A200, 125 (1949).Google Scholar
[8] For an overview of Matthew's work see Matthews, J. W., J. Vac. Sci. Technol. 12, 126 (1975).Google Scholar
[9] People, R., Phys. Rev. B 32, 1405 (1985).Google Scholar
[10] People, R. and Bean, J. C., Appl. Phys. Lett. 48, 538 (1986).Google Scholar
[11] People, R., Lang, D. V. and Bean, J. C., p. 767, Proc. 18th Int. Conf. on the Physics of Semiconductors, Stockholm (1986) World Scientific Press, Singapore (1987).Google Scholar
[12] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H. and Herzog, H. -J., Phys. Rev. Lett. 54, 2441 (1985).Google Scholar
[13] Luryi, S., Pearsall, T. P., Temkin, H. and Bean, J. C., IEEE Elec. Dev. Lett. EDL–7, 104 (1986).Google Scholar
[14] Pearsall, T. P., Temkin, H., Bean, J. C. and Luryi, S., IEEE Elec. Dev. Lett. EDL–7, 330 (1986).CrossRefGoogle Scholar
[15] Temkin, H., Pearsall, T. P., Bean, J. C., Logan, R. A. and Luryi, S., Appl. Phys. Lett. 48, 963 (1986).CrossRefGoogle Scholar
[16] Temkin, H., Bean, J. C., Pearsall, T. P., Olsson, N. A. and Lang, D. V., Appl. Phys. Lett. 49, 155 (1986).Google Scholar
[17] For further information see the 1987 Proceedings of this symposium.Google Scholar
[18] Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Manaerts, J. P. and Ourmazd, A., Phys. Rev. Lett. 58, 729 (1987).CrossRefGoogle Scholar
[19] Hybertsen, M. S., Schluter, M., People, R., Jackson, S. P., Lang, D. V., Pearsall, T. P., Bean, J. C., Vandenburg, Y. and Bevk, J., to be published J. Appl. Phys.Google Scholar
[20] Zunger, A., 2nd Int. Symp. on Si MBE, Honolulu, October 1987.Google Scholar
[21] Pearsall, T. P., Bean, J. C., People, R. and Fiory, A. T., p. 402, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[22] Pearsall, T. P. and Bean, J. C., IEEE Elec. Dev. Lett., EDL–7, 308 (1986).Google Scholar
[23] Daembkes, H., Herzog, H. -J., Jorke, H., Kibbel, H. and Kasper, E., to be published IEEE Trans. on Elec. Dev. ED–33, (1986).Google Scholar
[24] Temkin, H., p. 28, Silicon Molecular Beam Epitaxy II, Bean, J. C. and Schowalter, L. J., Eds., Electrochemical Soc., Pennington, NJ (1988).Google Scholar
[25] Iyer, S. S., Patton, G. L., Delage, S. L., Tiwari, S. and Stork, J. M. C., p. 114, IBID.Google Scholar
[26] Tatsumi, T., Hirayama, H. and Aizaki, N., Appl. Phys. Lett. 52, 895 (1988).Google Scholar
[27] Temkin, H., Bean, J. C., Antreasyan, A. and Leibenguth, R., Appl. Phys. Lett. 52, 1089 (1988).Google Scholar
[28] Iyer, S. S., to be published IEEE Elec. Dev. Lett.Google Scholar
[29] Fritz, I. J., Appl. Phys. Lett. 51, 1080 (1987).Google Scholar
[30] Fiory, A. T., Bean, J. C., Hull, R. and Nakahara, S., Phys. Rev. B21, 1860 (1985).Google Scholar
[31] Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1987).Google Scholar
[32] Kohama, Y., Fukuda, Y. and Seki, M., Appl. Phys. Lett. 52, 380 (1988).Google Scholar
[33] Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974) and 32, 265 (1974).Google Scholar
[34] Bean, J. C. and Butcher, P., p. 427, Silicon Molecular Beam Epitaxy, Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[35] Bean, J. C., Industrial Application: Possible Approaches, Chap. 14, in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla (1988).Google Scholar
[36] Bean, J. C. and Leibenguth, R. E., p. 603, Silicon Molecular Beam Epitaxy II, Bean, J. C. and Schowalter, L. J. Eds., Electrochemical Soc., Pennington, NJ (1988).Google Scholar
[37] Bellevance, D., Industrial Application: Perspective and Requirements, Chapt. 13 in Silicon Molecular Beam Epitaxy, Vol. II, Kasper, E. and Bean, J. C. Eds., CRC Press, Boca Raton, Fla. (1988).Google Scholar
[38] Matteson, S. and Bowling, R. A., to be published J. Vac. Sci. Technol.Google Scholar
[39] Donahue, T. J., Burger, W. R. and Reif, R., Appl. Phys. Lett. 44, 348 (1984) and references therein.Google Scholar
[40] Meyerson, B. S., LeGoues, F. K., Nguyen, T. N. and Harawe, D. L., Appl. Phys. Lett. 50, 113 (1987) and references therein.Google Scholar