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TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer

Published online by Cambridge University Press:  15 March 2011

M. Benamara ,
Z. Liliental-Weber ,
S. Kellermann ,
W. Swider ,
J. Washburn ,
J.H. Mazur  and
E. D. Bourret-Courchesne
M. Benamara
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
Z. Liliental-Weber
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
S. Kellermann
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
W. Swider
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
J. Washburn
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
J.H. Mazur
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
E. D. Bourret-Courchesne
Affiliation:
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road M.S. 62-203, Berkeley CA 94720.
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Abstract

We report on high quality GaN layers grown with the use of one intermediate layer. The defect analysis shows that the density of dislocation is only 8×107/cm2 in these layers, compared to over 1010/cm2 for layers grown without the intermediate layer (IL). Electron microscopy on cross-section samples shows that deposition under certain specific conditions of a low- temperature IL directly benefits the quality of the subsequently deposited GaN layer. The growth of the GaN top layer appears to be similar to growth observed for lateral epitaxial overgrowth layers. This first time observation opens the possibility for using standard growth methods of GaN compounds to achieve a dislocation density comparable to that achieved with lateral overgrowth epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.14.1
Copyright
Copyright © Materials Research Society 2000

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References

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