Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T19:38:03.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature

Published online by Cambridge University Press:  28 February 2011

Zuzanna Liliental-Weber
Zuzanna Liliental-Weber*
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory 62/203, Berkeley, CA 94720
Get access

Abstract

The structural quality of GaAs layers grown at 200°C by molecular beam epitaxy (MBE) was investigated by transmission electron microscopy (TEM). We found that a high crystalline perfection can be achieved in the layers grown at this low temperature for thickness up to 3 μm. In some samples we observed pyramid-shaped defects with polycrystalline cores surrounded by microtwins, stacking faults and dislocations. The size of these cores increased as the growth temperature was decreased and as the layer thickness was increased. The upper surface of layers with pyramidal defects became polycrystalline at a critical thickness of the order of 3μm. We suggested that the low-temperature GaAs becomes polycrystalline at a critical thickness either because of a decrease in substrate temperature during growth or because strain induced by excess As incorporated in these layers leads to the formation of misoriented GaAs nuclei, thereby initiating polycrystalline growth. The pyramidal shape of the defects results from a growth-rate hierarchy of the low index planes in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 371
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smith, F.W., Calawa, A.R., Chen, C.L., Manfra, M.J., and Mahoney, L.J., IEEE EDL-9, 77, (1988).Google Scholar
2. Kaminska, M., Weber, E.R., Liliental-Weber, Z., Leon, R. and Rek, Z., J. Vac. Sci. Technol. B7, 710 (1989).Google Scholar
3. Kaminska, M., Liliental-Weber, Z., Weber, E.R., George, T., Kortright, J.B., Smith, F.W., Tsaur, B.Y., and Calawa, A.R., Appl. Phys. Lett., 54, 1881 (1989).Google Scholar
4. Kaminska, M., Weber, E.R., Smith, F.W., Calawa, A.R., Yu, K.M., Leon, R. and George, T. 1990, subm. f. publ.Google Scholar
5. Liliental-Weber, Z.. Proc. of 12 International Congress for Electron Microscopy, Seattle, August, 1990.Google Scholar
6. Smith, F.W., Ph.D. thesis, Massachusetts Institute of Technology 1990.Google Scholar
7. Bafler, M., Munoz-Yague, A., and Rocher, A., J. Cryst. Growth 59, 531 (1982)Google Scholar
8. Metze, G.M., Calawa, A.R., and Mavroides, J.G., J. Vac. Sci. Technol. B1, 166 (1983)Google Scholar
9. Chai, Y.G., Pao, Y.C., and Hierl, T., Appl. Phys. Lett., 47, 1327 (1985).Google Scholar
10. Fujiwara, K., Nishikawa, Y., Tokuda, Y., and Nakayama, T., Appl. Phys. Lett., 48, 701 (1986).Google Scholar
11. Shinohara, M. and Ito, T., J. Appl. Phys., 65, 4260 (1989).Google Scholar
12. Calawa, A.R. and Manfra, M.J., unpublished.Google Scholar
13. Lavrentieva, L.G., Thin Solid Films 66, 71 (1980).Google Scholar
14. Calawa, A.R. and Manfra, M.J., presented at the Electronic Materials Conf., Burlington, VT, 1982.Google Scholar
15. Berg, R.S., Mavalvala, N., Smith, F. W., and Calawa, A.R., submitted to Phys. Rev. B.Google Scholar