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A Template Approach to Metal/III-V Semiconductor Epitaxy

Published online by Cambridge University Press:  25 February 2011

T. Sands ,
J.P. Harbison ,
C.J. Palmstrøm ,
R. Ramesh  and
V.G. Keramidas
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
J.P. Harbison
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
C.J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
R. Ramesh
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
V.G. Keramidas
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701-7040
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Abstract

The phase, orientation, defect structure, and surface morphology of an epitaxial thin film grown on a structurally dissimilar substrate can depend critically on the first few monolayers of growth. Using examples from metal/III-V semiconductor epitaxy, we illustrate how the overlayer structure and properties depend on the substrate surface reconstruction, the substrate temperature, and the order of deposition. For example, the orientation of a NiAI film grown on the {100}AIAs surface is determined by the composition of the first deposited monolayer. In another example, the nucleation of the bulk metastable phase, τMnAl is favored over the nucleation of the high temperature ∊ phase when the nucleation step occurs at the interface between a thin amorphous Mn-Al template and the AlAs/GaAs substrate. Furthermore, the orientation of the easy magnetic axis of ferromagnetic τMnAl can be controlled by a single monolayer of Mn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 271
Copyright
Copyright © Materials Research Society 1991

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References

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