Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T00:31:44.742Z Has data issue: false hasContentIssue false
  • English
  • Français

A Theoretical and Empirical Perspective of SiC Bulk Growth

Published online by Cambridge University Press:  10 February 2011

V. F. Tsvetkov ,
D. N. Henshall ,
M. F. Brady ,
R. C. Glass  and
C. H. Carter Jr.
V. F. Tsvetkov
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, valeritsvetkov@cree.com
D. N. Henshall
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, valeritsvetkov@cree.com
M. F. Brady
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, valeritsvetkov@cree.com
R. C. Glass
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, valeritsvetkov@cree.com
C. H. Carter Jr.
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC 27703, valeritsvetkov@cree.com
Get access

Abstract

The production of large diameter, high quality boules of SiC is essential to realize the full potential of this important semiconductor material. The objective of this paper is to provide a state-of-the-art analysis of the key directions for SiC bulk growth research, as well as presenting our most recent empirical results. Based on an analytical review of current knowledge, the following topics concerning growth of large 6H and 4H-SiC bulk crystals are discussed: 1) thermodynamics of the vapor phase including the efficiency of crystal growth, 2) kinetics of growth including mass transport in the boundary layer and 3) defect formation processes including thermoelastic stress. In addition, results of growth modeling are summarized and direction for further work suggested. Results on growth of semi-insulating and 50–75 mm diameter 4H-SiC wafers are presented. A discussion on micropipes, which are currently the most harmful defect in SiC wafers is presented. Although several mechanisms, or combinations of mechanisms, cause micropipes in SiC boules grown by the seeded sublimation method, we have reduced micropipe densities by orders of magnitude over the last few years. This continual reduction and the production of wafers with micropipe densities of less than 1 cm-2 (with >1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may soon be totally eliminated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 89
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sadler, R. A., Allen, S. T., Alcorn, T. S., Pribble, W. L., Sumakeris, J. J., and Palmour, J. W., accepted for presentation at 1998 Device Research Conference, Charlottesville, VA.Google Scholar
2. Irvine, K. G., Singh, R., Paisley, M. J., Palmour, J. W., Kordina, O. and Carter, C. H., Jr., This proceedings.Google Scholar
3. Kimoto, T., Wahab, Q., Ellison, A., Forsberg, U., Tuominen, M., Yakimova, R.. Henry, A. and Janzen, E, Materials Science Forum Vols. 264–268 (1998) pp. 921–924.Google Scholar
4. Palmour, J. W., Allen, S. T., Singh, R., Lipkin, L. A. and Waltz, D. G., 6th Int. Conf. on Silicon Carbide and Related Materials, edited by Nakashima, S., Matsunami, H., Yoshida, S. and Harima, H. (Inst. Phys. Conf. Ser. No. 142, Bristol, 1996) p. 813.Google Scholar
5. Palmour, J. W., Singh, R., and Waltz, D. G., 54th Annual Device Research Conference Digest, IEEE Cat. No. 96TH8193 (IEEE, Piscataway, NJ) (1996) p. 54.Google Scholar
6. Hofmann, D., Heinz, M., Winnacker, A., Durst, F., Kadinski, L., Kaufmann, P., Makarov, Yu. and Schafer, M., J. Crystal Growth 146, 214 (1995).Google Scholar
7. Pons, M., Blanquet, E., Dedulle, J. M., Garcon, I., Madar, R. and Bernard, C., J. Electrochem. Soc. 143, 3727 (1996).Google Scholar
8. Karpov, S. Yu., Makarov, Yu. N. and Ramm, M. S., phys.stat.sol.(b). 202, 201 (1997).Google Scholar
9. Chemov, A. A., Modem Crystallography III, (Springer-Verlag, Berlin Heidelberg New York Tokyo, 1984).Google Scholar
10. Carlslaw, H. S., and Jaeger, J. C., Conduction of Heat in Solids, (Oxford University Press, New York, 1959).Google Scholar
11. Parfenova, I. I., Tairov, Yu.M. and Tsvetkov, V. F., Sov. Phys. Semicond. 24, 158 (1990).Google Scholar
12. Wang, S., Dudley, M., Carter, C. H. Jr, Tsvetkov, V. F. and Fazi, C. in Applications of Synchrotron Radiation Techniques to Materials Science II in 1995, edited by Terminello, L. J., Shinn, N. D., Ice, G. E., D′Amico, K. L. and Perry, D. L. (Mat. Res. Soc. Proc. 375, Pittsburgh, 1995) p. 281–286.Google Scholar
13. Van Vechten, J. A., Phys. Rev. B 10, 1482 (1974).Google Scholar
14. Kawasuso, A.,Itoh, H. and Okada, S., J. Appl. Phys. 80, 5639 (1996).Google Scholar
15. Pensl, G. and Choyke, W. J., Physica B 195, 264 (1993).Google Scholar
16. Girka, A. I. and Mokhov, E. N., Phys. Solid State 37, 1855 (1995).Google Scholar